Semiconductors -- January 1997

Photoelectric amplification of variband photoresistors
V. G. Savitskii and B. S. Sokolovskii
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Relaxation spectra of photoluminescence from porous silicon obtained by chemical etching of laser-modified silicon
L. L. Fedorenko, A. D. Sardarly, É. B. Kaganovich, S. V. Svechnikov, S. P. Dikii, and S. V. Baranets
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Electrical properties of ZnSe/GaAs (100) heterostructures grown by photostimulated vapor-phase epitaxy
A. V. Kovalenko
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Electrical and photoelectric properties of a Pd–p⁰-Si–p-Si structure with a disordered intermediate p⁰ layer
S. V. Slobodchikov, Kh. M. Salikhov, E. V. Russu, M. M. Meredov, and A. I. Yazlyeva
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Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates
A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, A. F. Tsatsul'nikov, M. V. Maksimov,, N. N. Faleev, and P. S. Kop'ev
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Carrier accumulation and strong electrode sheath fields in illuminated, high-resistivity MISIM structures
B. I. Reznikov and G. V. Tsarenkov
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Growth of ZnSe films on GaAs(100) substrate by x-ray-enhanced, vapor-phase epitaxy
A. V. Kovalenko
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Photoelectric and photomagnetic properties of the gapless semiconductor Cd_xHg_{1 – x}Te in the infrared and millimeter spectral regions when an energy gap is opened
S. G. Gasan-zade, E. A. Sal'kov, and G. A. Shepel'skii
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Ion transfer processes in an insulating layer containing traps
E. I. Gol'dman
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Vibrational spectra of CuInS_2xSe_{2(1 – x)} solid solutions
I. V. Bodnar'
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Charge instability effects in the system silicon carbide–insulator
V. A. Karachinov
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Optical properties of quasiperiodic and aperiodic PbS–CdS superlattices
S. F. Musikhin, V. I. Il'in, O. V. Rabizo, L. G. Bakueva, and T. V. Yudintseva
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Waveguide properties of gallium, aluminum, and indium nitride heterostructures
V. E. Bugrov and A. S. Zubrilov
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Photoluminescence of InSb quantum dots in GaAs and GaSb matrices
A. F. Tsatsul'nikov, N. N. Ledentsov, M. V. Maksimov, B. Ya. Mel'tser, P. V. Neklyudov, S. V. Shaposhnikov, B. V. Volovik, I. L. Krestnikov, A. V. Sakharov, N. A. Bert,, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
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Investigation of the structure of the edge of the valence band of Cd_{1 – x}Mn_xS crystals on the basis of magnetooptical measurements
V. G. Abramishvili, A. V. Komarov, S. M. Ryabchenko, and Yu. G. Semenov
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Analysis of the temporal instability of the parameters of an insulator/III–V compound by the isothermal capacitance relaxation method
L. S. Berman
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Depth distribution of deep-level centers in silicon dioxide near an interface with indium phosphide
L. S. Berman
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Electron-phonon scattering engineering
J. Pozela, V. Juciene, A. Namajunas, and K. Pozela
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Monte Carlo simulation of the low-temperature mobility of two-dimensional electrons in a silicon inversion layer
V. M. Borzdov and T. A. Petrovich
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Study of PbTe photodiodes on a buffer sublayer of porous silicon
L. V. Belyakov, I. B. Zakharova, T. I. Zubkova, S. F. Musikhin, and S. A. Rykov
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High-frequency capacitance–voltage characteristic of GaAs-based, thin-film structures
N. B. Gorev, T. V. Makarova, E. F. Prokhorov, A. T. Ukolov, and V. I. Éppel'
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Quasiballistic model of current transport and formation of the S-type current–voltage characteristic in the lightly doped, double-barrier heterostructure Al_xGa_{1 – x}As–GaAs–AlAs
A. M. Belyantsev and Yu. Yu. Romanova
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Thermal stability of vertically coupled InAs–GaAs quantum dot arrays
A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, M. V. Maksimov,, A. F. Tsatsul'nikov, N. N. Ledentsov, N. Yu. Gordeev, S. V. Zaitsev, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
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Modulation of a quantum well potential by a quantum-dot array
A. F. Tsatsul'nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov,, N. N. Ledentsov, M. V. Maksimov, A. V. Sakharov, A. A. Suvorova, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
Full Text: PDF (186 kB)

Cathodoluminescence of p–n–p microstructures in CuInSe₂ crystals
S. G. Konnikov, G. A. Medvedkin, M. M. Sobolev, and S. A. Solov'ev
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