Semiconductors -- June 1998

Boris Petrovich Zakharchenya (on his 70th birthday)

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The role of macrodefects in electronic and ionic processes in wide-band II–VI semiconductors
B. R. Dzhumaev
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One-dimensional structures formed by low-temperature slip of dislocations that act as sources of dislocation absorption and emission in II–VI semiconductor crystals
N. I. Tarbaev and G. A. Shepel'skii
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Study of the surface structure of tin dioxide layers for gas sensors by atomic-force microscopy
M. V. Bestaev, D. Ts. Dimitrov, A. Yu. Il'in, V. A. Moshnikov, F. Träger, and F. Steitz
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Self-organizing nanoheterostructures in InGaAsP solid solutions
L. S. Vavilova, A. V. Ivanova, V. A. Kapitonov, A. V. Murashova, I. S. Tarasov, I. N. Arsent'ev, N. A. Bert, Yu. G. Musikhin, N. A. Pikhtin, and N. N. Faleev
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Pressure-induced insulator–metal transition in electron-irradiated Pb_{1 – x}Sn_xSe (x <= 0.03) alloys
E. P. Skipetrov, E. A. Zvereva, B. B. Kovalev, and L. A. Skipetrova
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Identifying the parameters of impurity levels in high-resistance semiconductor crystals by means of thermally stimulated currents with dosed illumination of the samples
P. G. Kasherininov and D. G. Matyukhin
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The nature of manganese luminescence centers in zinc sulfide single crystals
M. F. Bulanyi, B. A. Polezhaev, and T. A. Prokof'ev
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Defect-formation processes in silicon doped with manganese and germanium
K. P. Abdurakhmanov, Sh. B. Utamuradova, Kh. S. Daliev, S. G. Tadjy-Aglaeva, and R. M. Érgashev
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Structure of DX-like centers in narrow-band IV–VI semiconductors doped with group-III elements
I. I. Ivanchik, D. R. Khokhlov, A. I. Belogorokhov, Z. Popovic, and N. Romcevic
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Infrared reflectance spectra and Raman spectra of Cu_xAg_{1 – x}GaS₂ solid solutions
I. V. Bodnar'
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Analysis of capacitance-relaxation signals consisting of several exponentials
L. S. Berman
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Charge-transfer theory in polycrystalline semiconductors with deep impurity centers
K. M. Doshchanov
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Autosolitons in InSb in a magnetic field
I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev
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The effect of a strong electric field on the conductivity of a MnGaInS₄: Eu single crystal
O. B. Tagiev, T. Sh. Gashimova, and I. M. Askerov
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Experimental manifestations of correlated hopping in the temperature dependences of the conductivity of doped CdTe
N. V. Agrinskaya and V. I. Kozub
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Erbium impurity atoms in silicon
V. F. Masterov, F. S. Nasredinov, P. P. Seregin, E. I. Terukov, and M. M. Mezdrogina
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Oxygen precipitates and the formation of thermal donors in silicon
N. V. Vabishchevich, D. I. Brinkevich, and V. S. Prosolovich
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Induced photopleochroism of p-GaAlAs/p–n-GaAs structures
A. Berdinobatov, N. Nazarov, V. M. Sarkisova, V. Yu. Rud', and Yu. V. Rud'
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Surface mobility and distribution of electrons in the accumulation layer of Ga₂Se₃/GaAs heterostructures
V. F. Antyushin, D. A. Vlasov, and I. N. Arsent'ev
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The quantum Hall effect in a wide p-Ge_{1 – x}Si_x/Ge/p-Ge_{1 – x}Si_x potential well
Yu. G. Arapov, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, M. V. Yakunin, and O. A. Kuznetsov
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Elimination of the electron-phonon interaction in superlattices in a quantizing magnetic field
O. V. Kibis
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Deep states in silicon delta-doped GaAs
V. Ya. Aleshkin, V. M. Danil'tsev, A. V. Murel', O. I. Khrykin, and V. I. Shashkin
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Electron-phonon interaction and electron mobility in quantum-well type-II PbTe/PbS structures
V. V. Bondarenko, V. V. Zabudskii, and F. F. Sizov
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Degradation of MOS tunnel structures at high current density
I. V. Grekhov, A. F. Shulekin, and M. I. Veksler
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On the temperature and field dependences of the effective surface mobility in MIS structures
V. A. Gergel', M. V. Timofeev, and A. P. Zelenyi
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Subthreshold characteristics of electrostatically controlled transistors and thyristors III. Buried gate
A. S. Kyuregyan
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