Semiconductors -- December 1998
Volume 32, Issue 12,
pp. 1257-1330
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Kinetics of the accumulation of radiation defects during the high-dose electron irradiation of Pb1 – xSnxSe alloys
E. P. Skipetrov, B. B. Kovalev, L. A. Skipetrova, and E. A. Zvereva
Full Text: PDF (109 kB)
Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon
V. V. Artamanov, M. Ya. Valakh, N. I. Klyui, V. P. Mel'nik, A. B. Romanyuk, B. N. Romanyuk, and V. A. Yukhimchuk
Full Text: PDF (96 kB)
Model of the redistribution of erbium during the solid-phase epitaxial crystallization of silicon
O. V. Aleksandrov, Yu. A. Nikolaev, and N. A. Sobolev
Full Text: PDF (90 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Density-of-states anomaly and tunneling conductance of Au/p-GaAs0.94Sb0.06 contacts near the metal–insulator transition
T. Yu. Allen, Kh. G. Nazhmudinov, and T. A. Polyanskaya
Full Text: PDF (161 kB)
Kinetics of electric field screening in a space-charge region with a leakage channel and low-temperature conductance of surface channels in high-resistivity n-Si
N. I. Bochkareva and A. V. Klochkov
Full Text: PDF (166 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Macroscopic ion traps at the silicon-oxide interface
S. G. Dmitriev and Yu. V. Markin
Full Text: PDF (124 kB)
Manifestations of the deneutralization of mobile charges in SiO2 in the spectroscopy of the silicon-oxide interface
S. G. Dmitriev and Yu. V. Markin
Full Text: PDF (86 kB)
LOW-DIMENSIONAL SYSTEMS
Transformation of nonradiative recombination centers in GaAs/AlGaAs quantum well structures upon treatment in a CF4 plasma followed by low-temperature annealing
K. S. Zhuravlev, A. L. Sokolov, and K. P. Mogil'nikov
Full Text: PDF (104 kB)
Weak localization and intersubband transitions in delta-doped GaAs
G. M. Min'kov, S. A. Negashev, O. É. Rut, A. V. Germanenko, V. V. Valyaev, and V. L. Gurtovoi
Full Text: PDF (103 kB)
Quantum corrections to the conductivity of a two-dimensional system with antidots
M. M. Makhmudian and M. V. Éntin
Full Text: PDF (119 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Transient processes in photocathodes at high laser intensities
B. I. Reznikov and A. V. Subashiev
Full Text: PDF (180 kB)
Features of the current-voltage characteristics of long semiconductor structures under ultrahigh-level double-injection conditions
N. M. Volodin, A. V. Khanova, P. S. Smertenko, and L. L. Fedorenko
Full Text: PDF (127 kB)
Continuous stimulated emission at T = 293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region
V. P. Evtikhiev, I. V. Kudryashov, E. Yu. Kotel'nikov, V. E. Tokranov, A. N. Titkov, I. S. Tarasov, and Zh. I. Alferov
Full Text: PDF (517 kB)
PERSONALIA
Solomon Meerovich Ryvkin (On his 80th Birthday)
Full Text: PDF (209 kB)
ERRATA
Erratum: Autosolitons in InSb in a magnetic field [Semiconductors 32, 625–628 (June 1988)]
I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev
Full Text: PDF (19 kB)