| dc.description | Semiconductors -- July 2001
Volume 35, Issue 7, pp. 735-859
REVIEWS
Doping of Semiconductors Using Radiation Defects Produced by Irradiation with Protons and Alpha Particles
V. A. Kozlov and V. V. Kozlovski
pp. 735-761 Full Text: PDF (280 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
The Microstructure and Physical Properties of Thin SnO2 Films
S. I. Rembeza, T. V. Svistova, E. S. Rembeza, and O. I. Borsyakova
pp. 762-765 Full Text: PDF (233 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
The Accuracy of Reconstructing the Semiconductor Doping Profile from Capacitance���Voltage Characteristics Measured during Electrochemical Etching
I. R. Karetnikova, I. M. Nefedov, and V. I. Shashkin
pp. 766-772 Full Text: PDF (83 kB)
Optical Properties of Cd1 ��� xZnxTe (0 < x < 0.1) Single Crystals in the Infrared Spectral Region
A. I. Belogorokhov, V. M. Lakeenkov[dagger], and L. I. Belogorokhova
pp. 773-776 Full Text: PDF (54 kB)
Metallic Conductivity over an Acceptor Band of Lightly Compensated Copper-Doped p-Hg0.78Cd0.22Te Crystals
V. V. Bogoboyashchii
pp. 777-783 Full Text: PDF (93 kB)
Fermi Level Pinning and Electrical Properties of Irradiated CdxHg1 ��� xTe Alloys
V. N. Brudnyi and S. N. Grinyaev
pp. 784-787 Full Text: PDF (55 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Effect of Ballistic Electron Transport in Metal���n-GaAs���n+-GaAs Schottky-Barrier Structures
N. A. Torkhov
pp. 788-795 Full Text: PDF (102 kB)
Calculation of the Variation in the Work Function Caused by Adsorption of Metal Atoms on Semiconductors
S. Yu. Davydov and A. V. Pavlyk
pp. 796-799 Full Text: PDF (45 kB)
Charge Transport in HgCdTe-based n+���p Photodiodes
J. V. Gumenjuk-Sichevskaja, F. F. Sizov, V. N. Ovsyuk, V. V. Vasil'ev, and D. G. Esaev
pp. 800-806 Full Text: PDF (96 kB)
LOW-DIMENSIONAL SYSTEMS
Electronic State Mixing in Xx and Xy Valleys in AlAs/GaAs (001)
G. F. Karavaev and V. N. Chernyshov
pp. 807-815 Full Text: PDF (110 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Adsorption-based Porosimetry Using Capacitance Measurements
E. A. Tutov, A. Yu. Andryukov, and E. N. Bormontov
pp. 816-820 Full Text: PDF (53 kB)
Structural Transformations and Silicon Nanocrystallite Formation in SiOx Films
V. Ya. Bratus', V. A. Yukhimchuk, L. I. Berezhinsky, M. Ya. Valakh, I. P. Vorona, I. Z. Indutnyi, T. T. Petrenko, P. E. Shepeliavyi, and I. B. Yanchuk
pp. 821-826 Full Text: PDF (96 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Luminescence Spectra and Efficiency of GaN-based Quantum-Well Heterostructure Light Emitting Diodes: Current and Voltage Dependence
V. E. Kudryashov, S. S. Mamakin, A. N. Turkin, A. �. Yunovich, A. N. Kovalev, and F. I. Manyakhin
pp. 827-834 Full Text: PDF (133 kB)
Interaction of Metal Nanoparticles with a Semiconductor in Surface-Doped Gas Sensors
S. V. Ryabtsev, E. A. Tutov, E. N. Bormontov, A. V. Shaposhnik, and A. V. Ivanov
pp. 835-839 Full Text: PDF (59 kB)
Cross-Sectional Electrostatic Force Microscopy of Semiconductor Laser Diodes
A. V. Ankudinov, E. Yu. Kotel'nikov, A. A. Kantsel'son, V. P. Evtikhiev, and A. N. Titkov
pp. 840-846 Full Text: PDF (371 kB)
Comparative Analysis of Long-Wavelength (1.3 ��m) VCSELs on GaAs Substrates
N. A. Maleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, A. P. Vasil'ev, V. M. Ustinov, N. N. Ledentsov, and Zh. I. Alferov
pp. 847-853 Full Text: PDF (91 kB)
1.3 ��m Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them
A. V. Sakharov, I. L. Krestnikov, N. A. Maleev, A. R. Kovsh, A. E. Zhukov, A. F. Tsatsul'nikov, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, J. A. Lott, and Zh. I. Alferov
pp. 854-859 Full Text: PDF (97 kB) | en |
