| dc.description | Semiconductors -- March 2004
Volume 38, Issue 3, pp. 245-367
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Genesis of Nanoscale Defects and Damage in GaAs Subjected to Multipulse Quasi-Static Photostrains in Micrometer-Sized Regions of Semiconductor
S. V. Vintsents, A. V. Zaitseva, V. B. Zaitsev, and G. S. Plotnikov
pp. 245-252 Full Text: PDF (148 kB)
Effects of Predoping and Implantation Conditions on Diffusion of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing
M. V. Ardyshev, V. M. Ardyshev, and Yu. Yu. Kryuchkov
pp. 253-257 Full Text: PDF (69 kB)
Simulation of the Concentration Dependence of Boron Diffusion in Silicon
O. V. Aleksandrov
pp. 258-261 Full Text: PDF (55 kB)
Chromium Diffusion in Gallium Arsenide
S. S. Khludkov, O. B. Koretskaya, and A. V. Tyazhev
pp. 262-265 Full Text: PDF (50 kB)
Special Features of Sb2 and Sb4 Incorporation in MBE-Grown AlGaAsSb Alloys
A. N. Semenov, V. S. Sorokin, V. A. Solov'ev, B. Ya. Mel'tser, and S. V. Ivanov
pp. 266-272 Full Text: PDF (82 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Determination of Gallium Concentration in Germanium Doped Using Neutron-Induced Nuclear Transmutation from Measurements of Resistivity in the Region of Hopping Conductivity
O. P. Ermolaev and T. Yu. Mikul'chik
pp. 273-276 Full Text: PDF (54 kB)
Effect of Uniform Compression on Photoluminescence Spectra of GaAs Layers Heavily Doped with Beryllium
T. S. Shamirzaev, K. S. Zhuravlev, J. Bak-Misiuk, A. Misiuk, J. Z. Domagala, and J. Adamczewska
pp. 277-280 Full Text: PDF (48 kB)
Impedance of Solid Solutions Based on Gallium-Doped Lead Telluride
B. A. Akimov, V. V. Pryadun, L. I. Ryabova, and D. R. Khokhlov
pp. 281-283 Full Text: PDF (44 kB)
Role of Space Charge in the Resistance Formation in a Bipolar Semiconductor Sample
A. Konin
pp. 284-287 Full Text: PDF (51 kB)
Magnetic Investigations of Cd1 ��� xZnxTe (x = 0.12, 0.21) Wide-Gap Semiconductors
Yu. V. Shaldin, I. Warchulska, M. Kh. Rabadanov, and V. K. Komar'
pp. 288-292 Full Text: PDF (68 kB)
Transport Phenomena in Coarse-Grain CdTe Polycrystals
S. A. Kolosov, Yu. V. Klevkov, and A. F. Plotnikov
pp. 293-297 Full Text: PDF (66 kB)
A Critical Analysis of Investigation of Deep Levels in High-Resistivity CdS Single Crystals by Photoelectric Transient Spectroscopy
A. P. Odrinskii
pp. 298-303 Full Text: PDF (77 kB)
The Role of Alloying Effects in the Formation of Electronic Structure of Unordered Group III Nitride Solid Solutions
A. V. Voznyy and V. G. Deibuk
pp. 304-309 Full Text: PDF (122 kB)
Optical Properties of Polycrystalline Zinc Selenide
A. N. Bryzgalov, V. V. Musatov, and V. V. Buz'ko
pp. 310-312 Full Text: PDF (31 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Low-Temperature Relaxation of Elastic Stresses in SiGe/Si Heterostructures Irradiated with Ge+ Ions
V. S. Avrutin, Yu. A. Agafonov, A. F. Vyatkin, V. I. Zinenko, N. F. Izyumskaya, D. V. Irzhak, D. V. Roshchupkin, �. A. Steinman, V. I. Vdovin, and T. G. Yugova
pp. 313-318 Full Text: PDF (172 kB)
Native Disorder Potential at the Surface of a Heavily Doped Semiconductor
V. B. Bondarenko, V. V. Korablev, and Yu. I. Ravich
pp. 319-321 Full Text: PDF (45 kB)
LOW-DIMENSIONAL SYSTEMS
Spectral Line Broadening in Quantum Wells due to the Coulomb Interaction of Carriers
A. A. Afonenko
pp. 322-328 Full Text: PDF (90 kB)
Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate
V. G. Dubrovskii, Yu. G. Musikhin, G. �. Cirlin, V. A. Egorov, N. K. Polyakov, Yu. B. Samsonenko, A. A. Tonkikh, N. V. Kryzhanovskaya, N. A. Bert, and V. M. Ustinov
pp. 329-334 Full Text: PDF (191 kB)
Quantum Confined Stark Effect and Electroabsorption in Semiconductor Spherical Layers
V. A. Arutyunyan, K. S. Aramyan, and G. Sh. Petrosyan
pp. 335-339 Full Text: PDF (70 kB)
Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy
I. P. Soshnikov, N. V. Kryzhanovskaya, N. N. Ledentsov, A. Yu. Egorov, V. V. Mamutin, V. A. Odnoblyudov, V. M. Ustinov, O. M. Gorbenko, H. Kirmse, W. Neumann, and D. Bimberg
pp. 340-343 Full Text: PDF (205 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films
S. K. Persheyev, P. R. Drapacz, M. J. Rose, and A. G. Fitzgerald
pp. 344-346 Full Text: PDF (46 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Temperature Dependence of Electroluminescence of Er Ions in Tunnel Diodes Based on (111)Si:(Er, O)
A. M. Emel'yanov and N. A. Sobolev
pp. 347-351 Full Text: PDF (63 kB)
Blue���Green Radiation in GaAs-Based Quantum-Well Lasers
N. V. Baidus', A. A. Biryukov, B. N. Zvonkov, S. M. Nekorkin, and V. Ya. Aleshkin
pp. 352-354 Full Text: PDF (47 kB)
GaAs/Ge Heterostructure Photovoltaic Cells Fabricated by a Combination of MOCVD and Zinc Diffusion Techniques
V. M. Andreev, V. P. Khvostikov, N. A. Kalyuzhnyi, S. S. Titkov, O. A. Khvostikova, and M. Z. Shvarts
pp. 355-359 Full Text: PDF (74 kB)
Internal Optical Loss in Semiconductor Lasers
N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, and I. S. Tarasov
pp. 360-367 Full Text: PDF (98 kB) | en |
