| dc.identifier.uri | http://hdl.handle.net/11401/77489 | |
| dc.description.sponsorship | This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree. | en_US |
| dc.format | Monograph | |
| dc.format.medium | Electronic Resource | en_US |
| dc.language.iso | en_US | |
| dc.publisher | The Graduate School, Stony Brook University: Stony Brook, NY. | |
| dc.type | Dissertation | |
| dcterms.abstract | Mid-wave to long-wave infrared (3~12 μ m in wavelength) optoelectronic devices have broad applications in gas sensing, molecular spectroscopy, imaging, environmental, industrial monitoring, etc. This work aims to explore new III-V materials and heterostructures to develop light emitting devices and detectors for the infrared spectral region. Optical properties of dilute nitride GaSbN and InAsN materials were investigated. We observed strong bandgap reduction with increasing nitrogen incorporation. GaSbN with 1.4% of nitrogen showed 300 meV narrower bandgap than GaSb; for InAsN the bandgap energy was reduced by 150 meV with nitrogen incorporation up to 2.25%. The carrier lifetimes within the picoseconds - nanoseconds range were measured for GaSbN and InAsN. InAs1-xSbx alloys have the smallest bandgap energies within conventional III-V semiconductors. We demonstrated that growing compositionally graded buffers (Ga(Al)InSb on GaSb substrates) allows the fabrication of bulk unstrained and unrelaxed InAs1-xSbx layers with band gap energy as low as 120 meV. Photoluminescence spectra (5 -10 μ m) and minority carrier lifetimes (up to 250 ns) were measured. Light emitting diodes (LEDs) and photodetectors were fabricated using InAs1-xSbx alloys. LEDs with x = 0.2 and x = 0.4 demonstrated output powers of 90 μ W at 5 μ m and 8 μ W at 8 μ m respectively, at the temperature of 80 K. Barrier type photodetectors with InAs1-xSbx (x = 0.4) absorber layer and AlInSb barrier were fabricated. Front side illuminated detectors with 1 μ m thick absorber demonstrated an external quantum efficiency of 18 % at 8 μ m at 150 K. | |
| dcterms.available | 2017-09-20T16:52:48Z | |
| dcterms.contributor | Kamoua, Ridha | en_US |
| dcterms.contributor | Belenky, Gregory | en_US |
| dcterms.contributor | Donetsky, Dmitry | en_US |
| dcterms.contributor | Shterengas, Leon | en_US |
| dcterms.contributor | Hwang, David. | en_US |
| dcterms.creator | Wang, Ding | |
| dcterms.dateAccepted | 2017-09-20T16:52:48Z | |
| dcterms.dateSubmitted | 2017-09-20T16:52:48Z | |
| dcterms.description | Department of Electrical Engineering. | en_US |
| dcterms.extent | 73 pg. | en_US |
| dcterms.format | Application/PDF | en_US |
| dcterms.format | Monograph | |
| dcterms.identifier | http://hdl.handle.net/11401/77489 | |
| dcterms.issued | 2013-12-01 | |
| dcterms.language | en_US | |
| dcterms.provenance | Made available in DSpace on 2017-09-20T16:52:48Z (GMT). No. of bitstreams: 1
Wang_grad.sunysb_0771E_11535.pdf: 7157698 bytes, checksum: 3cc4da67052996284ff5cce50b8d8366 (MD5)
Previous issue date: 1 | en |
| dcterms.publisher | The Graduate School, Stony Brook University: Stony Brook, NY. | |
| dcterms.subject | Detector, Dilute nitride, InAsSb, Lifetime, Metamorphic | |
| dcterms.subject | Electrical engineering | |
| dcterms.title | Development of narrow gap semiconductor materials and devices for optoelectronic applications | |
| dcterms.type | Dissertation | |
