Browsing by Author Raghothamachar, Balaji

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Issue DateTitleAuthor(s)
1-Dec-2013Characterization of Defects in Single Crystal Epitaxial Silicon for Solar cellsDudley, Micheal; Wang, Hao; Department of Materials Science and Engineering.; Raghothamachar, Balaji; Venkatesh, T.A..
1-Dec-2016Characterization of Structural Defects in Wide Band-Gap Compound Materials for Semiconductor and Opto-Electronic ApplicationsDudley, Michael; GOUE, Ouloide Yannick; Department of Materials Science and Engineering; Raghothamachar, Balaji; Sokolov, Jonathan; Hossain, Anwar.
1-Dec-2016Characterization of Structural Defects in Wide Band-Gap Compound Materials for Semiconductor and Opto-Electronic ApplicationsDudley, Michael; GOUE, Ouloide Yannick; Department of Materials Science and Engineering; Raghothamachar, Balaji; Sokolov, Jonathan; Hossain, Anwar.
1-Dec-2016Characterization of Structural Defects in Wide Band-Gap Compound Materials for Semiconductor and Opto-Electronic ApplicationsDudley, Michael; GOUE, Ouloide Yannick; Department of Materials Science and Engineering; Raghothamachar, Balaji; Sokolov, Jonathan; Hossain, Anwar.
1-Dec-2012Characterizations of Defects in Bulk SapphireDudley, Michael; Raghothamachar, Balaji; Yang, Yu; Department of Materials Science and Engineering.; Venkatesh, T. A..
1-Aug-2017Computational Modeling of Indentation of Thin Films and Flow Through Porous MediaVenkatesh, T. A.; Zhi, Zheng; Department of Materials Science and Engineering; Koga, Tad; Raghothamachar, Balaji; Hwang, David
1-Dec-2014Defect Analysis of Boron Phosphide Thin Films and Sapphire Single Crystal Using Synchrotron X-ray TopographyDudley, Michael; Raghothamachar, Balaji; Ding, Zihao; Department of Materials Science and Engineering.; Venkatesh, T.
1-Dec-2011Defect characterization and stress analysis by white beam synchrotron X-ray topography in single crystal semiconducting materialsDudley, Michael; Sarkar, Vishwanath; Department of Materials Science and Engineering; Gersappe, Dilip; Raghothamachar, Balaji; Noveski, Vladimir.
1-Dec-2014Defect Characterization in 4H Silicon Carbide Bulk Crystals and EpilayersDudley, Michael; Wu, Fangzhen; Department of Materials Science and Engineering.; Raghothamachar, Balaji; Venkatesh, T.; Su, Dong.
1-Dec-2015Defect Studies and Optimization of CVD Grown Boron Phosphide Films on Different SubstratesDudley, Michael; Wang, Xuejing; Department of Materials Science and Engineering.; Raghothamachar, Balaji; T. A., Venkatesh.
1-Dec-2013Defect studies in 4H- Silicon Carbide PVT grown bulk crystals, CVD grown epilayers and devicesDudley, Michael; Byrappa, Shayan Mysore; Department of Materials Science and Engineering.; Sokolov, Jonathan; Raghothamachar, Balaji; Su, Dong.
1-Dec-2013Defects Analysis of Wide Bandgap Semiconductor Single Crystals via Synchrotron White Beam X-ray TopographyDudley, Michael; Raghothamachar, Balaji; Sun, Shun; Department of Materials Science and Engineering.; Venkatesh, T. A..
1-Dec-2014Diamond detector--material science, design and applicationSmedley, John; Dudley, Michael; Gaowei, Mengjia; Department of Materials Science and Engineering.; Raghothamachar, Balaji; Muller, Erik.
1-Dec-2016Evaluation of 4H Silicon Carbide and Gallium Nitride Crystals for Power Electronics & Lighting ApplicationsDudley, Michael; Yang, Xiaolin; Department of Materials Science and Engineering; Raghothamachar, Balaji; Venkatesh, T.A..
1-Dec-2016Evaluation of 4H Silicon Carbide and Gallium Nitride Crystals for Power Electronics & Lighting ApplicationsDudley, Michael; Yang, Xiaolin; Department of Materials Science and Engineering; Raghothamachar, Balaji; Venkatesh, T.A..
1-Dec-2016Evaluation of 4H Silicon Carbide and Gallium Nitride Crystals for Power Electronics & Lighting ApplicationsDudley, Michael; Yang, Xiaolin; Department of Materials Science and Engineering; Raghothamachar, Balaji; Venkatesh, T.A..
1-Dec-2014Properties of Boron Phosphide Films Grown on Different Substrates and Conoscopic Study of SapphireDudley, Michael; Raghothamachar, Balaji; Chen, Ruifen; Department of Materials Science and Engineering.; Venkatesh, T.A..
1-Dec-2014Studies of Growth Mechanism and Defect Origins in 4H-Silicon Carbide Substrates and Homoepitaxial LayersDudley, Michael; Wang, Huanhuan; Department of Materials Science and Engineering.; Gersappe, Dilip; Raghothamachar, Balaji; Hansen, Darren.
1-Dec-2014Synchrotron White Beam X-ray Topography Study of EFG Sapphire RibbonsDudley, Michael; Raghothamachar, Balaji; Li, Zheyu; Department of Materials Science and Engineering.; Dudley, Michael; Raghothamachar, Balaji; Venkatesh, T. A.
1-May-2017Synchrotron X-ray Characterization of Structural Defects in III-Nitride Wide Bandgap SemiconductorsDudley, Michael; Raghothamachar, Balaji; Wu, Shuang; Department of Materials Science and Engineering