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Title: Semiconductors V. 33, I. 10
Authors: Editor of work here.
Preservation Department, Stony Brook University Libraries.
Cataloging & Metadata Department, Stony Brook University Libraries.
Keywords: Semiconductors
Issue Date: Oct-1999
Publisher: MAIK ���Nauka/Interperiodica��.
Stony Brook University.
Series/Report no.: V. 33
I. 10
Description: leave(s) : ill; 28 cm.
Semiconductors -- October 1999 Volume 33, Issue 10, pp. 1049-1155 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment I. V. Antonova, V. P. Popov, D. V. Kilanov, E. P. Neustroev, and A. Misuk Full Text: PDF (55 kB) Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic G. �. Tsirlin, V. N. Petrov, N. K. Polyakov, S. A. Masalov, A. O. Golubok, D. V. Denisov, Yu. A. Kudryavtsev, B. Ya. Ber, and V. M. Ustinov Full Text: PDF (553 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Detection of paramagnetic recombination centers in proton-irradiated silicon L. S. Vlasenko, M. P. Vlasenko, V. A. Kozlov, and V. V. Kozlovskii Full Text: PDF (47 kB) Luminescence properties of InAs layers and p���n structures grown by metallorganic chemical vapor deposition T. I. Voronina, N. V. Zotova, S. S. Kizhayev, S. S. Molchanov, and Yu. P. Yakovlev Full Text: PDF (68 kB) Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy A. S. Zubrilov, Yu. V. Melnik, A. E. Nikolaev, M. A. Jacobson, D. K. Nelson, and V. A. Dmitriev Full Text: PDF (70 kB) The energy spectrum of lead selenide implanted with oxygen A. N. Veis and N. A. Suvorova Full Text: PDF (63 kB) Autosolitons in an electron���hole plasma/excitons system in silicon at 4.2 K A. M. Musaev Full Text: PDF (57 kB) Influence of indium doping on the formation of silicon���(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures A. E. Kunitsyn, V. V. Chaldyshev, S. P. Vul', V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin Full Text: PDF (55 kB) Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium V. V. Emtsev, V. V. Emtsev, Jr., D. S. Poloskin, E. I. Shek, N. A. Sobolev, J. Michel, and L. C. Kimerling Full Text: PDF (66 kB) SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES Electronic properties of a GaAs surface treated with hydrochloric acid E. F. Venger, S. I. Kirillova, and V. E. Primachenko Full Text: PDF (70 kB) Photoconversion in heterocontacts of CdTe and its analogs with protein Yu. V. Rud', V. Yu. Rud', I. V. Bodnar', V. V. Shatalova, and G. A. Il'chuk Full Text: PDF (57 kB) Fabrication and photosensitivity of AgInSe2/III���VI isotypic heterojunctions V. Yu. Rud', V. F. Gremenok, Yu. V. Rud', R. N. Bekimbetov, and I. V. Bodnar' Full Text: PDF (44 kB) Influence of atomic-hydrogen treatment on the surface properties of n���n+ GaAs structures N. A. Torkhov and S. V. Eremeev Full Text: PDF (1173 kB) Production and properties of In/HgGa2S4 Schottky barriers V. Yu. Rud', Yu. V. Rud', M. C. Ohmer, and P. G. Schunemann Full Text: PDF (47 kB) Effect of hydrogen on the current���voltage characteristics of Pd/p-InGaAsP and Pd/n-InGaAs barrier structures V. P. Voronkov and L. S. Khludkova Full Text: PDF (52 kB) LOW-DIMENSIONAL SYSTEMS Determination of the electron mobility and density in thin semiconductor films at microwave frequencies using the magnetoplasma resonance P. A. Borodovskii and A. F. Buldygin Full Text: PDF (65 kB) Modeling of the electron distribution in AlGaAs/GaAs (delta-Si) structures grown on vicinal surfaces V. M. Osadchii Full Text: PDF (43 kB) Effect of the configuration of a quantum wire on the electron���phonon interaction O. V. Kibis Full Text: PDF (46 kB) Inelastic scattering of hot electrons by neutral donors in heavily silicon-doped GaAs/AlAs quantum wells I. A. Akimov, V. F. Sapega, D. N. Mirlin, B. P. Zakharchenya, V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, and A. A. Sirenko Full Text: PDF (58 kB) Momentum relaxation time and temperature dependence of electron mobility in semiconductor superlattices consisting of weakly interacting quantum wells S. I. Borisenko Full Text: PDF (82 kB) Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method V. Ya. Aleshkin, N. A. Bekin, M. N. Buyanova, A. V. Murel', and B. N. Zvonkov Full Text: PDF (83 kB) AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS Role of impurities in the formation of silicyne (long-chain silicon): theory and experiment A. I. Mashin, A. F. Khokhlov, S. K. Ignatov, A. A. Shchepalov, and A. G. Razuvaev Full Text: PDF (70 kB) Formation of optically active centers in films of erbium-doped amorphous hydrated silicon M. M. Mezdrogina, M. P. Annaorazova, E. I. Terukov, I. N. Trapeznikova, and N. Nazarov Full Text: PDF (51 kB) Variation of the parameters and composition of thin films of porous silicon as a result of oxidation: ellipsometric studies E. V. Astrova, V. B. Voronkov, A. D. Remenyuk, V. B. Shuman, and V. A. Tolmachev Full Text: PDF (102 kB)
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