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Title: Semiconductors V. 31, I. 11
Authors: Editor of work here.
Preservation Department, Stony Brook University Libraries.
Cataloging & Metadata Department, Stony Brook University Libraries.
Keywords: Semiconductors
Issue Date: Nov-1997
Publisher: MAIK ���Nauka/Interperiodica��.
Stony Brook University.
Series/Report no.: V. 31
I. 11
Description: leave(s) : ill; 28 cm.
Semiconductors -- November 1997 Volume 31, Issue 11, pp. 1101-1215 Anisotropic thermocouples article A. A. Snarskii, A. M. Pal'ti, and A. A. Ashcheulov Full Text: PDF (286 kB) Low-energy nonparabolicity and condenson states in In4Se3 crystals D. M. Bercha, L. Yu. Kharkhalis, A. I. Bercha, and M. Shnajder Full Text: PDF (153 kB) Tunneling effects in light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with quantum wells V. E. Kudryashov, K. G. Zolin, A. N. Turkin, A. �. Yunovich, A. N. Kovalev, and F. I. Manyakhin Full Text: PDF (131 kB) Electron-structural metastability of cationic donor centers in GaAs D. E. Onopko, A. I. Ryskin, and N. T. Bagraev Full Text: PDF (92 kB) Optical properties of thin n-Pb1 ��� xSnxSe/BaF2 epitaxial layers in the plasmon���phonon interaction region A. A. Kopylov, V. A. Moshnikov, and A. N. Kholodilov Full Text: PDF (135 kB) Position of antimony impurity atoms in a PbTe lattice, determined by emission M�_ssbauer spectroscopy V. F. Masterov, F. S. Nasredinov, S. A. Nemov, P. P. Seregin, N. N. Troitskaya, and S. I. Bondarevskii Full Text: PDF (47 kB) Extraction of charge carriers in semiconductors with a monopolar component of the photoconductivity A. I. Vlasenko, Z. K. Vlasenko, and A. V. Lyubchenko Full Text: PDF (100 kB) Photoluminescence of n-type ZnSe crystals doped with donor and acceptor impurities from a LiCl salt melt G. N. Ivanova, V. A. Kasiyan, and D. D. Nedeoglo Full Text: PDF (84 kB) Effect of band-gap narrowing on the diffusion of charged impurities in semiconductors B. S. Sokolovskii and L. S. Monastyrskii Full Text: PDF (82 kB) Photoconductivity of CuInSe2 films V. Yu. Rud' and Yu. V. Rud' Full Text: PDF (62 kB) Relaxation properties of a metal���chalcogenide glassy semiconductor V. T. Avanesyan, V. A. Bordovskii, and R. A. Castro Full Text: PDF (42 kB) Electrical and photoelectric properties of an anisotypic Pb0.93Sn0.07Se/PbSe heterojunction T. A. Gavrikova and V. A. Zykov Full Text: PDF (90 kB) Excitonic electroluminescence of 6H-SiC p���n structures obtained by sublimation epitaxy A. A. Lebedev, N. K. Poletaev, and M. Z. doKarmo Full Text: PDF (63 kB) Passivation of GaAs in alcohol solutions of ammonium sulfide V. N. Bessolov, E. V. Konenkova, M. V. Lebedev, and D. R. T. Zahn Full Text: PDF (105 kB) Heating of a two-dimensional electron gas by the electric field of a surface acoustic wave I. L. Drichko, A. M. D'yakonov, V. D. Kagan, A. M. Kreshchuk, T. A. Polyanskaya, I. G. Savel'ev, I. Yu. Smirnov, and A. V. Suslov Full Text: PDF (175 kB) Optical spectroscopy of two-dimensional electronic states in modulation-doped N-AlGaAs/GaAs heterostructures A. V. Guk, V. �. Kaminskii, V. G. Mokerov, Yu. V. Fedorov, and Yu. V. Khabarov Full Text: PDF (158 kB) Effect of the spin-orbit interaction on the optical spectra of an acceptor in a semiconductor quantum dot A. F. Polupanov, V. I. Galiev, and M. G. Novak Full Text: PDF (161 kB) Photoluminescence of porous gallium arsenide D. N. Goryachev and O. M. Sreseli Full Text: PDF (68 kB) Polarization memory in an oxidized porous SiC layer A. M. Danishevskii, A. Yu. Rogachev, V. B. Shuman, and E. G. Guk Full Text: PDF (86 kB) Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3��m T. N. Danilova, A. P. Danilova, O. G. Ershov, A. N. Imenkov, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (89 kB) Influence of valence band absorption on the threshold characteristics of long-wavelength InAs lasers N. A. Gun'ko, G. G. Zegrya, N. V. Zotova, Z. N. Sokolova, N. M. Stus', and V. B. Khalfin Full Text: PDF (296 kB) Influence of plasma treatment of the surface of silicon carbide on the characteristics of buried-gate junction field-effect transistors P. A. Ivanov, O. I. Kon'kov, V. N. Panteleev, and T. P. Samsonova Full Text: PDF (64 kB)
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