Please use this identifier to cite or link to this item: http://hdl.handle.net/11401/70132
Title: Semiconductors V. 32, I. 02
Authors: Editor of work here.
Preservation Department, Stony Brook University Libraries.
Cataloging & Metadata Department, Stony Brook University Libraries.
Keywords: Semiconductors
Issue Date: Feb-1998
Publisher: MAIK ���Nauka/Interperiodica��.
Stony Brook University.
Series/Report no.: V. 32
I. 02
Description: leave(s) : ill; 28 cm.
Semiconductors -- February 1998 Volume 32, Issue 2, pp. 117-229 Recombination of charge carriers in dislocation-free silicon containing growth microdefects of various types L. A. Kazakevich and P. F. Lugakov Full Text: PDF (69 kB) Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation L. I. Khirunenko, V. I. Shakhovtsov, and V. V. Shumov Full Text: PDF (76 kB) Diffusion doping of undoped hydrogenated amorphous silicon with tin G. S. Kulikov and K. Kh. Khodzhaev Full Text: PDF (30 kB) Ultrashallow p+-n junctions in silicon (100): electron-beam diagnostics of the surface zone A. N. Andronov, S. V. Robozerov, N. T. Bagraev, and L. E. Klyachkin Full Text: PDF (159 kB) Exciton characteristics of intercalated TlGaSe2 single crystal S. N. Mustafaeva, E. M. Kerimova, and N. Z. Gasanov Full Text: PDF (54 kB) Deformation potentials of the Gamma(000) band extrema in CdGa2S4 T. G. Kerimova, Sh. S. Mamedov, and I. A. Mamedova Full Text: PDF (98 kB) Optical spectra of microcrystals of the layered semiconductor PbI2 grown in glass matrices A. S. Ablitsova, V. F. Agekyan, and A. Yu. Serov Full Text: PDF (82 kB) Excited states of chalcogen ions in germanium A. Yu. Ushakov, R. M. Shterengas, L. M. Shterengas, and N. B. Radchuk Full Text: PDF (73 kB) Self-compensation in CdTe in the presence of phase equilibrium of the system crystal-cadmium (tellurium) vapor O. A. Matveev and A. I. Terent'ev Full Text: PDF (92 kB) Negative dynamic differential conductivity at the cyclotron frequency in Ga1 ��� xAlxAs under conditions of ballistic intervalley electron transfer G. �. Dzamukashvili, Z. S. Kachlishvili, and N. K. Metreveli Full Text: PDF (174 kB) The effect of copper doping of n-ZnSe crystals on the structure of luminescence centers of long-wavelength luminescence G. N. Ivanova, V. A. Kasiyan, D. D. Nedeoglo, and S. V. Oprya Full Text: PDF (106 kB) The structure of high-temperature blue luminescence centers in zinc selenide and mechanisms of this luminescence G. N. Ivanova, V. A. Kasiyan, N. D. Nedeoglo, D. D. Nedeoglo, and A. V. Simashkevich Full Text: PDF (74 kB) Effect of heteroepitaxial surface passivation on the photosensitivity spectra and recombination parameters of GaAs layers I. A. Karpovich and M. V. Stepikhova Full Text: PDF (115 kB) Transient current in amorphous, porous semiconductor���crystalline semiconductor structures L. P. Kazakova and �. A. Lebedev Full Text: PDF (110 kB) Current���voltage characteristics of Si:B blocked impurity���band structures under conditions of hopping-transport-limited photoresponse B. A. Aronzon, D. Yu. Kovalev, A. M. Kozlov, J. Leotin, and V. V. Ryl'kov Full Text: PDF (141 kB) Ohmic contact formation during continuous heating of GaAs and GaP Shottky diodes Yu. A. Goldberg and E. A. Posse Full Text: PDF (60 kB) Relaxation of the electric field in high-resistivity, strongly biased MISIM structures with deep impurity levels B. I. Reznikov Full Text: PDF (117 kB) Photoelectrical memory in GaAs/AlGaAs multilayer quantum-well structures V. N. Ovsyuk, M. A. Dem'yanenko, V. V. Shashkin, and A. I. Toropov Full Text: PDF (109 kB) Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs T. I. Voronina, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, A. E. Rosov, and Yu. P. Yakovlev Full Text: PDF (113 kB) Interband absorption of long-wavelength radiation in delta-doped superlattices based on single-crystal wide-gap semiconductors V. V. Osipov, A. Yu. Selyakov, and M. Foygel Full Text: PDF (115 kB) Lateral traveling wave as a type of transient process in a resonant-tunneling structure D. V. Mel'nikov and A. I. Podlivaev Full Text: PDF (142 kB) The structure of porous gallium phosphide T. N. Zavaritskaya, A. V. Kvit, N. N. Mel'nik, and V. A. Karavanskii Full Text: PDF (406 kB) InAsSbP double-heterostructure lasers for the spectral range 2.7���3.0 ��m (T = 77 K) T. N. Danilova, A. P. Danilova, O. G. Ershov, A. N. Imenkov, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (94 kB) Gamma-induced metastable states of doped, amorphous, hydrated silicon M. S. Ablova, G. S. Kulikov, and S. K. Persheev Full Text: PDF (72 kB) Subthreshold characteristics of electrostatically controlled transistors and thyristors. 1. Shallow planar gate A. S. Kyuregyan and S. N. Yurkov Full Text: PDF (140 kB)
URI: http://hdl.handle.net/1951/41385
http://hdl.handle.net/11401/70132
Appears in Collections:Nauka/Interperiodica [SBU]

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