Please use this identifier to cite or link to this item: http://hdl.handle.net/11401/70154
Title: Semiconductors V. 33, I. 06
Authors: Editor of work here.
Preservation Department, Stony Brook University Libraries.
Cataloging & Metadata Department, Stony Brook University Libraries.
Keywords: Semiconductors
Issue Date: Jun-1999
Publisher: MAIK ���Nauka/Interperiodica��.
Stony Brook University.
Series/Report no.: V. 33
I. 06
Description: leave(s) : ill; 28 cm.
Semiconductors -- June 1999 Volume 33, Issue 6, pp. 595-705 PUBLICATION OF THE SEMINAR PROCEEDINGS IS DEDICATED TO THE MEMORY OF V. F MASTEROV INTAS���RFBR Seminar on Rare-Earth Impurities in Semiconductors and Low-Dimensional Semiconductor Structures, St. Petersburg State Technical University, October 26, 1998 OPENING ADDRESS B. P. Zakharchenya Full Text: PDF (22 kB) Erbium-doped silicon epilayers grown by liquid-phase epitaxy S. Binetti, S. Pizzini, A. Cavallini, and B. Fraboni Full Text: PDF (51 kB) Photoluminescence of erbium-doped silicon: excitation power dependence C. A. J. Ammerlaan, D. T. X. Thao, T. Gregorkiewicz, and N. A. Sobolev Full Text: PDF (94 kB) Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium V. V. Emtsev, V. V. Emtsev, Jr., D. S. Poloskin, N. A. Sobolev, E. I. Shek, J. Michel, and L. C. Kimerling Full Text: PDF (57 kB) Redistribution of erbium during the crystallization of buried amorphous silicon layers O. V. Aleksandrov, Yu. A. Nikolaev, N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, and Yu. A. Kudryavtsev Full Text: PDF (71 kB) Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium- and dysprosium-implanted silicon N. A. Sobolev, E. I. Shek, A. M. Emel'yanov, V. I. Vdovin, and T. G. Yugova Full Text: PDF (58 kB) Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures N. A. Sobolev, Yu. A. Nikolaev, A. M. Emel'yanov, and V. I. Vdovin Full Text: PDF (75 kB) Mechanisms of excitation of the f ��� f emission in silicon codoped with erbium and oxygen V. F. Masterov and L. G. Gerchikov Full Text: PDF (140 kB) Mechanism of erbium electroluminescence in hydrogenated amorphous silicon M. S. Bresler, O. B. Gusev, P. E. Pak, E. I. Terukov, K. D. Ts�ndin, and I. N. Yassievich Full Text: PDF (49 kB) Effect of annealing on the optical and structural properties of GaN:Er N. A. Sobolev, V. V. Lundin, V. I. Sakharov, I. T. Serenkov, A. S. Usikov, and A. M. Emel'yanov Full Text: PDF (52 kB) Optical activity of Yb in GaAs and low-dimensional GaAs/GaAlAs structures A. A. Gippius, V. M. Konnov, V. A. Dravin, N. N. Loiko, I. P. Kazakov, and V. V. Ushakov Full Text: PDF (59 kB) ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Photothermoacoustic and photoelectric microscopy of silicon R. M. Burbelo, A. G. Kuz'mich, and I. Ya. Kucherov Full Text: PDF (1839 kB) Radiation-thermal activation of silicon implanted in gallium arsenide V. M. Ardyshev and A. P. Surzhikov Full Text: PDF (83 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Photoionization of short-range acceptor states in uniaxially deformed semiconductors A. A. Abramov, V. N. Tulupenko, V. T. Vas'ko, and D. A. Firsov Full Text: PDF (132 kB) Electric and luminescence properties of GaAs���AIIBIVC2V single crystals I. K. Polushina, Yu. V. Rud', and V. Yu. Rud' Full Text: PDF (84 kB) Reciprocal drag of electrons and phonons in strongly doped HgFeSe semiconductors I. I. Lyapilin and Kh. M. Bikkin Full Text: PDF (148 kB) SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES Scanning tunneling microscopy investigation of the microtopography of SiO2 and Si surfaces at the Si/SiO2 interface in SIMOX structures D. V. Vyalykh and S. I. Fedoseenko Full Text: PDF (454 kB) Reconstruction and electron states of a Ga2Se3���GaAsheterointerface B. L. Agapov, N. N. Bezryadin, G. I. Kotov, M. P. Sumets, and I. N. Arsent'ev Full Text: PDF (199 kB) Sulfide passivation of GaAs power diodes V. M. Botnaryuk, Yu. V. Zhilyaev, and E. V. Konenkova Full Text: PDF (63 kB) Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor N. N. Bezryadin, �. P. Domashevskaya, G. I. Kotov, R. V. Kuz'menko, M. P. Sumets, and I. N. Arsent'ev Full Text: PDF (176 kB) Deep-level recombination spectroscopy in GaP light-emitting diodes S. V. Bulyarskii, M. O. Vorob'ev, N. S. Grushko, and A. V. Lakalin Full Text: PDF (93 kB) Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbide p-n structures M. V. Belous, A. M. Genkin, and V. K. Genkina Full Text: PDF (106 kB) LOW-DIMENSIONAL SYSTEMS Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy G. �. Tsyrlin, V. N. Petrov, S. A. Masalov, and A. O. Golubok Full Text: PDF (729 kB) Dimensionality effects in the hot-electron photoluminescence of gallium arsenide: 2D���quasi-3D transition V. F. Sapega, V. I. Perel', D. N. Mirlin, I. A. Akimov, T. Ruf, M. Cardona, W. Winter, and K. Eberl Full Text: PDF (71 kB) AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS Effect of substrate material on the rate of growth and the optical parameters of a-C : H layers T. K. Zvonareva and L. V. Sharonova Full Text: PDF (96 kB) PHYSICS OF SEMICONDUCTOR DEVICES Photosensitivity of GaAlAs/GaAs heterophotoelements in linearly polarized light V. Yu. Rud', Yu. V. Rud', and V. P. Khvostikov Full Text: PDF (107 kB) Increasing the power of broad-waveguide lasers by additional selection of transverse modes I. A. Kostko, V. P. Evtikhiev, E. Yu. Kotel'nikov, and G. G. Zegrya Full Text: PDF (215 kB) Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin Full Text: PDF (107 kB) PERSONALIA In Memory of Vadim Fedorovich Masterov Full Text: PDF (147 kB)
URI: http://hdl.handle.net/1951/41402
http://hdl.handle.net/11401/70154
Appears in Collections:Nauka/Interperiodica [SBU]

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