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Title: Semiconductors V. 33, I. 02
Authors: Editor of work here.
Preservation Department, Stony Brook University Libraries.
Cataloging & Metadata Department, Stony Brook University Libraries.
Keywords: Semiconductors
Issue Date: Feb-1999
Publisher: MAIK ���Nauka/Interperiodica��.
Stony Brook University.
Series/Report no.: V. 33
I. 02
Description: leave(s) : ill; 28 cm.
Semiconductors -- February 1999 Volume 33, Issue 2, pp. 107-222 REVIEW Deep level centers in silicon carbide: A review A. A. Lebedev Full Text: PDF (404 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy A. Yu. Andreev, B. A. Andreev, M. N. Drozdov, Z. F. Krasil'nik, M. V. Stepikhova, V. B. Shmagin, V. P. Kuznetsov, R. A. Rubtsova, E. A. Uskova, Yu. A. Karpov, H. Ellmer, L. Palmetshofer, K. Piplits, and H. Hutter Full Text: PDF (87 kB) Evidence for epsilon2-conductivity in the magnetoresistance of multivalley semiconductors N. V. Agrinskaya, V. I. Kozub, T. A. Polyanskaya, and A. S. Saidov Full Text: PDF (165 kB) Hot-carrier far infrared emission in silicon L. A. Kosyachenko and M. P. Mazur Full Text: PDF (71 kB) SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES Bragg reflectors for cylindrical waves V. V. Nikolaev, G. S. Sokolovskii, and M. A. Kaliteevskii Full Text: PDF (139 kB) LOW-DIMENSIONAL SYSTEMS Photo- and electroluminescence in the 1.3-��m wavelength range from quantum-dot structures grown on GaAs substrates A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, N. A. Maleev, V. M. Ustinov, B. V. Volovik, M. V. Maksimov, A. F. Tsatsul'nikov, N. N. Ledentsov, Yu. M. Shernyakov, A. V. Lunev, Yu. G. Musikhin, N. A. Bert, P. S. Kop'ev, and Zh. I. Alferov Full Text: PDF (479 kB) Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures M. M. Sobolev, A. R. Kovsh, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, and Yu. G. Musikhin Full Text: PDF (491 kB) Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, A. F. Tsatsul'nikov, B. V. Volovik, P. S. Kop'ev, and Zh. I. Alferov Full Text: PDF (59 kB) AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS Optical properties of porous silicon layers processed with a HF:HCl:C2H5OH electrolyte A. I. Belogorokhov and L. I. Belogorokhova Full Text: PDF (111 kB) Conductivity of structures based on doped nanocrystalline SnO2 films with gold contacts B. A. Akimov, A. M. Gas'kov, S. E. Podguzova, M. N. Rumyantseva, L. I. Ryabova, M. Labeau, and A. Tadeev Full Text: PDF (42 kB) Influence of the substrate temperature and annealing on the 1.54-��m erbium photoluminescence of a-Si:H films obtained using a glow discharge E. I. Terukov, O. I. Kon'kov, V. Kh. Kudoyarova, O. B. Gusev, G. Weiser, and H. Kuehne Full Text: PDF (64 kB) PHYSICS OF SEMICONDUCTOR DEVICES Transport properties and photosensitivity of metal/porous-silicon/c-Si structures D. G. Yarkin Full Text: PDF (77 kB) Gain in injection lasers based on self-organized quantum dots A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, A. F. Tsatsul'nikov, and P. S. Kop'ev Full Text: PDF (144 kB) Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operation A. N. Kovalev, F. I. Manyakhin, V. E. Kudryashov, A. N. Turkin, and A. �. Yunovich Full Text: PDF (168 kB) Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operating in the 3.0 to 3.6-��m spectral range M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin Full Text: PDF (116 kB) High-power light-emitting diodes operating in the 1.9 to 2.1 ��� ��m spectral range T. N. Danilova, B. E. Zhurtanov, A. L. Zakgeim, N. D. Il'inskaya, A. N. Imenkov, O. N. Saraev, M. A. Sipovskaya, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (76 kB) Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (lambda = 3.3 ��m) due to nonlinear optical effects A. P. Danilova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (118 kB) Long-wavelength photodiodes based on Ga1 ��� xInxAsySb1 ��� y with composition near the miscibility boundary I. A. Andreev, E. V. Kunitsyna, M. P. Mikhailova, and Yu. P. Yakovlev Full Text: PDF (115 kB) ERRATA Erratum: Effect of the diameter of the photoexcited region on the picosecond relaxation of bleaching in a thin layer of GaAs [Semiconductors 32, 484���487 (May 1998)]; Stimulated-emission spectrum arising from interband absorption of a picosecond optical pulse in a thin layer of GaAs [Semiconductors 32, 479���483 (May 1998)] I. L. Bronevoi and A. N. Krivonosov Full Text: PDF (28 kB) Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048���1053 (October 1998)] N. I. Katsavets, G. M. Laws, I. Harrison, E. C. Larkins, T. M. Benson, T. S. Cheng, and C. T. Foxon Full Text: PDF (19 kB)
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