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|Title:||Defect studies in 4H- Silicon Carbide PVT grown bulk crystals, CVD grown epilayers and devices|
Byrappa, Shayan Mysore
Department of Materials Science and Engineering.
|Publisher:||The Graduate School, Stony Brook University: Stony Brook, NY.|
|Abstract:||Silicon Carbide [SiC]which exists as more than 200 different polytypes is known for superior high temperature and high power applications in comparison to conventional semiconductor materials like Silicon and Germanium. The material finds plethora of applications in a diverse fields due to its unique properties like large energy bandgap, high thermal conductivity and high electric breakdown field. Though inundated with superior properties the potential of this material has not been utilized fully due to impeding factors such as defects especially the crystalline ones which limit their performance greatly. Lots of research has been going on for decades to reduce these defects and there has been subsequent improvement in the quality as the diameter of SiC commercial wafers has reached 150mm from 25mm since its inception. The main focus of this thesis has been to study yield limiting defect structures in conjunction with several leading companies and national labs using advanced characterization tools especially the Synchrotron source. The in depth analysis of SiC has led to development of strategies to reduce or eliminate the density of defects by studying how the defects nucleate, replicate and interact in the material. The strategies discussed to reduce defects were proposed after careful deliberation and analysis of PVT grown bulk crystals and CVD grown epilayers. Following are some of the results of the study:  Macrostep overgrowth mechanism in SiC was used to study the deflection of threading defects onto the basal plane resulting in stacking faults. Four types of stacking faults associated with deflection of c/c+a threading defectshave been observed to be present in 76mm, 100mm and 150mm diameter wafers. The PVT grown bulk crystals and CVD grown epilayers in study were subjected to contrast studies using synchrotron white beam X- ray topography [SWBXT]. The SWBXT image contrast studies of these stacking faults with comparison of calculated phase shifts for postulated fault vectors by macrostep overgrowth of surface outcrops, has revealed faults to be of four types of which one of the following are discussed in detail which is the Shockley faults. The fault vector were determined by taking into account the contrast from stacking faults in SWBXT undergoing phase shift as the X-ray wave fields cross the fault plane. The deflected dislocations onto the basal plane were responsible for the stacking faults and were observed to be detrimental to the devices grown on them as they replicate to the epilayer. In the wafers studied at different stages of the SiC crystal boule resulted in reduction of threading defects as they at certain stage get deflected out of the crystal causing drop of defects density.  A novel technique known as the Ray Tracing Simulation was used to determine the sense of c/c+a dislocations obtained via Grazing- Incidence X-ray Topography. Determination of the complete sense and burgers vector of these dislocations was very important to augment our proposed models on stacking faults associated with these defects. Orientation contrast mechanism in X- ray diffraction topography was previously determined to be the dominant factor in SiC by our group and the same principles were used for the simulation. The results were surmised after extensive comparison between experimental and simulation images for the c+2a defects.  With the BPD density down to a record level of few hundred per square centimeter in several wafers in multiple regions made it possible to observe the conversion of sessile Threading Edge Dislocations [TED] to glissile BPDs with this repeating multiple times. Previously the high density of Basal Plane Dislocations [BPD] prevented from discerning the details accurately in the SiC images taken by SWBXT. The contribution of SWBXT in accurately categorizing the nature of dislocations in SiC has enabled the crystal growth community to incorporate strategies to mitigate their influence. One of them has been recognizing BPDs as deformation induced defects which have led to the development of strategies to reduce stress imperative for the motion of BPDs to levels below critical resolved shear stress. This in turn has provided an opportunity for last five years to resolve important defect interactions in the crystals with one of them being the operation of single- ended Frank Read source for the first time in SiC.  Failure analysis of SiC bipolar devices using SWBXT and correlation with defect density has been studied to determine how the defect density affect breakdown voltage of high power junction diodes. It was observed that the screw dislocation density unlike in failure analysis studies performed previously did not affect the breakdown voltage for these Junction Barrier Schottky (JBS) rectifiers. The defects that were detrimental were the triangular defects, stacking faults and micropipes in bipolar devices observed on 4H- SiC patterned wafers.|
|Appears in Collections:||Stony Brook Theses and Dissertations Collection|
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