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Semiconductors V. 31, I. 07

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dc.contributor.editor dc.contributor.editor[en_US] en_US
dc.contributor.other dc.contributor.other[en_US] en_US
dc.contributor.other dc.contributor.other[en_US] en_US
dc.date.accessioned 2007-06-11T18:37:26Z
dc.date.accessioned 2015-04-24T14:42:07Z
dc.date.available 2007-06-11T18:37:26Z
dc.date.available 2015-04-24T14:42:07Z
dc.date.issued 1997-07 en_US
dc.identifier.uri http://hdl.handle.net/1951/41377
dc.identifier.uri http://hdl.handle.net/11401/70111
dc.description dc.description[en_US] en_US
dc.description Semiconductors -- July 1997 Volume 31, Issue 7, pp. 651-761 Effect of impurities with variable valency on the transport phenomena in a quantum well I. I. Lyapilin Full Text: PDF (111 kB) Charge-carrier lifetime in Hg1 ��� xCdxTe (x = 0.22) structures grown by molecular-beam epitaxy A. V. Voitsekhovskii, Yu. A. Denisov, A. P. Kokhanenko, V. S. Varavin, S. A. Dvoretskii, V. T. Liberman, N. N. Mikhailov, and Yu. G. Sidorov Full Text: PDF (70 kB) Frenkel'���Poole effect for boron impurity in silicon in strong warming electric fields A. M. Kozlov and V. V. Ryl'kov Full Text: PDF (75 kB) Measurement of the diffusion length of minority charge carriers using real Schottky barriers N. L. Dmitruk, O. Yu. Borkovskaya, and S. V. Mamykin Full Text: PDF (100 kB) Effect of successive implantation of Ag+(Cu+) and Xe+ ions on the recombination properties of CdxHg1 ��� xTe crystals M. I. Ibragimova, N. S. Baryshev, V. Yu. Petukhov, and I. B. Khaibullin Full Text: PDF (86 kB) Characteristic features of Raman scattering of light in silicon doped with high krypton doses M. F. Galyautdinov, N. V. Kurbatova, S. A. Moiseev, and E. I. Shtyrkov Full Text: PDF (68 kB) Simulation of heat and mass transfer during growth of silicon carbide single crystals B. A. Kirillov, A. S. Bakin, Yu. M. Tairov, and S. N. Solnyshkin Full Text: PDF (123 kB) Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides V. M. Botnaryuk, A. V. Koval', A. V. Simashkevich, D. A. Sherban, V. Yu. Rud', and Yu. V. Rud' Full Text: PDF (115 kB) Photosensitivity of thin-film ZnO/CdS/Cu(In, Ga)Se2 solar cells T. Walter, V. Yu. Rud', Yu. V. Rud', and H. W. Schock Full Text: PDF (96 kB) High-temperature annealing and nuclear-transmutation doping of GaAs bombarded by reactor neutrons V. N. Brudnyi, V. A. Novikov, V. V. Peshev, N. G. Kolin, and A. I. Noifekh Full Text: PDF (106 kB) Characteristic structural features of amorphous hydrated silicon films deposited by direct-currect decomposition of silane in a magnetic field O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudoyarova, and M. M. Kazanin Full Text: PDF (77 kB) Effect of laser irradiation on the photoconductivity and noise in n-Cdx Hg1 ��� xTe single crystals A. I. Vlasenko, V. A. Gnatyuk, E. P. Kopishinskaya, and P. E. Mozol' Full Text: PDF (61 kB) Photoelasticity and quadratic permittivity of wide-gap semiconductors S. Yu. Davydov and S. K. Tikhonov Full Text: PDF (57 kB) Role of spatial localization of a particle during tunneling N. L. Chuprikov Full Text: PDF (91 kB) Variation of the optical properties of porous silicon as a result of thermal annealing in vacuum V. A. Kiselev, S. V. Polisadin, and A. V. Postnikov Full Text: PDF (61 kB) Electron-hole scattering in p-type silicon with a low charge-carrier injection level T. T. Mnatsakanov, L. I. Pomortseva, and V. B. Shuman Full Text: PDF (68 kB) Effect of tin impurity on the photoconductivity kinetics of thin amorphous layers of arsenic selenide M. S. Iovu, E. P. Kolomeiko, and S. D. Shutov Full Text: PDF (106 kB) Study of submicron deposits in polycrystalline materials using the internal-friction method Yu. N. Andreev, N. P. Yaroslavtsev, M. V. Bestaev, D. Ts. Dimitrov, V. A. Moshnikov, and Yu. M. Tairov Full Text: PDF (41 kB) Mechanism of electroluminescence of porous silicon in electrolytes D. N. Goryachev, O. M. Sreseli, and L. V. Belyakov Full Text: PDF (61 kB) Excitonic effects in the photoconductivity of quantum-well GaxIn1 ��� x As/InP structures M. F. Panov and A. N. Pikhtin Full Text: PDF (59 kB) Lateral association of vertically coupled quantum dots A. F. Tsatsul'nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, B. V. Volovik, A. A. Suvorova, N. A. Bert, and P. S. Kop'ev Full Text: PDF (216 kB) Characteristic features of silicon multijunction solar cells with vertical p���n junctions E. G. Guk, T. A. Nalet, M. Z. Shvarts, and V. B. Shuman Full Text: PDF (57 kB) 1/f noise in strongly doped n-type GaAs under band���band illumination conditions N. V. D'yakonova, M. E. Levinshtein, S. L. Rumyantsev, and F. Pascal Full Text: PDF (115 kB) Longitudinal photoeffect in In0.53Ga0.47As p���n junctions S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu Full Text: PDF (72 kB) Deep centers and negative temperature coefficient of the breakdown voltage of SiC p���n structures A. A. Lebedev, S. Ortoland, C. Raynaud, M. L. Locatelli, D. Planson, and J. P. Chante Full Text: PDF (67 kB) Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon E. I. Terukov, A. N. Kuznetsov, E. O. Parshin, G. Weiser, and H. Kuehne Full Text: PDF (49 kB) Photovoltaic effect in an asymmetric GaAs/AlGaAs nanostructure produced as a result of laser excitation I. V. Kucherenko, L. K. Vodop'yanov, and V. I. Kadushkin Full Text: PDF (53 kB) A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface I. A. Avrutskii and V. G. Litovchenko Full Text: PDF (111 kB) Faraday rotation of light in a microcavity M. A. Kaliteevskii, A. V. Kavokin, and P. S. Kop'ev Full Text: PDF (109 kB) Effect of radiation on the characteristics of MIS structures containing rare-earth oxides Ya. G. Fedorenko, L. A. Otavina, E. V. Ledeneva, and A. M. Sverdlova Full Text: PDF (92 kB) Calculation of a hierarchical PbS���C superlattice in a multiwell model E. Ya. Glushko and V. N. Evteev Full Text: PDF (79 kB) Viktor Il'ich Fistul' (On his seventieth birthday) Full Text: PDF (27 kB) Electronic Phenomena in Chalcogenide Glassy Semiconductors Collective monograph edited by K. D. Ts�ndin, Nauka, St. Petersburg, 1986, 486 pages Full Text: PDF (20 kB) en
dc.format dc.format[en_US] en_US
dc.format.extent 2246583 bytes
dc.format.extent 8497 bytes
dc.format.medium dc.format.medium[en_US] en_US
dc.format.mimetype application/pdf
dc.format.mimetype text/html
dc.language.iso en_US en
dc.publisher MAIK ���Nauka/Interperiodica��. en
dc.publisher dc.publisher[en_US] en_US
dc.relation.ispartofseries V. 31 en
dc.relation.ispartofseries I. 07 en
dc.rights All Rights Reserved. Stony Brook University. en_US
dc.rights dc.rights[en_US] en_US
dc.subject Semiconductors en
dc.subject.lcsh dc.subject.lcsh[en_US] en_US
dc.subject.lcsh Physics en
dc.subject.other dc.subject.other[en_US] en_US
dc.title Semiconductors V. 31, I. 07 en
dc.type dc.type[en_US] en_US
dc.description.contributor dc.description.contributor[en_US] en_US
dc.description.contributor dc.description.contributor[en_US] en_US
dc.publisher.location dc.publisher.location[en_US] en_US


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