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Semiconductors V. 31, I. 11

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dc.contributor.editor Editor of work here. en_US
dc.contributor.other Preservation Department, Stony Brook University Libraries. en_US
dc.contributor.other Cataloging & Metadata Department, Stony Brook University Libraries. en_US
dc.date.accessioned 2007-06-11T18:43:51Z
dc.date.accessioned 2015-04-24T14:42:10Z
dc.date.available 2007-06-11T18:43:51Z
dc.date.available 2015-04-24T14:42:10Z
dc.date.issued 1997-11 en_US
dc.identifier.uri http://hdl.handle.net/1951/41382
dc.identifier.uri http://hdl.handle.net/11401/70126
dc.description leave(s) : ill; 28 cm. en_US
dc.description Semiconductors -- November 1997 Volume 31, Issue 11, pp. 1101-1215 Anisotropic thermocouples article A. A. Snarskii, A. M. Pal'ti, and A. A. Ashcheulov Full Text: PDF (286 kB) Low-energy nonparabolicity and condenson states in In4Se3 crystals D. M. Bercha, L. Yu. Kharkhalis, A. I. Bercha, and M. Shnajder Full Text: PDF (153 kB) Tunneling effects in light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with quantum wells V. E. Kudryashov, K. G. Zolin, A. N. Turkin, A. �. Yunovich, A. N. Kovalev, and F. I. Manyakhin Full Text: PDF (131 kB) Electron-structural metastability of cationic donor centers in GaAs D. E. Onopko, A. I. Ryskin, and N. T. Bagraev Full Text: PDF (92 kB) Optical properties of thin n-Pb1 ��� xSnxSe/BaF2 epitaxial layers in the plasmon���phonon interaction region A. A. Kopylov, V. A. Moshnikov, and A. N. Kholodilov Full Text: PDF (135 kB) Position of antimony impurity atoms in a PbTe lattice, determined by emission M�_ssbauer spectroscopy V. F. Masterov, F. S. Nasredinov, S. A. Nemov, P. P. Seregin, N. N. Troitskaya, and S. I. Bondarevskii Full Text: PDF (47 kB) Extraction of charge carriers in semiconductors with a monopolar component of the photoconductivity A. I. Vlasenko, Z. K. Vlasenko, and A. V. Lyubchenko Full Text: PDF (100 kB) Photoluminescence of n-type ZnSe crystals doped with donor and acceptor impurities from a LiCl salt melt G. N. Ivanova, V. A. Kasiyan, and D. D. Nedeoglo Full Text: PDF (84 kB) Effect of band-gap narrowing on the diffusion of charged impurities in semiconductors B. S. Sokolovskii and L. S. Monastyrskii Full Text: PDF (82 kB) Photoconductivity of CuInSe2 films V. Yu. Rud' and Yu. V. Rud' Full Text: PDF (62 kB) Relaxation properties of a metal���chalcogenide glassy semiconductor V. T. Avanesyan, V. A. Bordovskii, and R. A. Castro Full Text: PDF (42 kB) Electrical and photoelectric properties of an anisotypic Pb0.93Sn0.07Se/PbSe heterojunction T. A. Gavrikova and V. A. Zykov Full Text: PDF (90 kB) Excitonic electroluminescence of 6H-SiC p���n structures obtained by sublimation epitaxy A. A. Lebedev, N. K. Poletaev, and M. Z. doKarmo Full Text: PDF (63 kB) Passivation of GaAs in alcohol solutions of ammonium sulfide V. N. Bessolov, E. V. Konenkova, M. V. Lebedev, and D. R. T. Zahn Full Text: PDF (105 kB) Heating of a two-dimensional electron gas by the electric field of a surface acoustic wave I. L. Drichko, A. M. D'yakonov, V. D. Kagan, A. M. Kreshchuk, T. A. Polyanskaya, I. G. Savel'ev, I. Yu. Smirnov, and A. V. Suslov Full Text: PDF (175 kB) Optical spectroscopy of two-dimensional electronic states in modulation-doped N-AlGaAs/GaAs heterostructures A. V. Guk, V. �. Kaminskii, V. G. Mokerov, Yu. V. Fedorov, and Yu. V. Khabarov Full Text: PDF (158 kB) Effect of the spin-orbit interaction on the optical spectra of an acceptor in a semiconductor quantum dot A. F. Polupanov, V. I. Galiev, and M. G. Novak Full Text: PDF (161 kB) Photoluminescence of porous gallium arsenide D. N. Goryachev and O. M. Sreseli Full Text: PDF (68 kB) Polarization memory in an oxidized porous SiC layer A. M. Danishevskii, A. Yu. Rogachev, V. B. Shuman, and E. G. Guk Full Text: PDF (86 kB) Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3��m T. N. Danilova, A. P. Danilova, O. G. Ershov, A. N. Imenkov, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (89 kB) Influence of valence band absorption on the threshold characteristics of long-wavelength InAs lasers N. A. Gun'ko, G. G. Zegrya, N. V. Zotova, Z. N. Sokolova, N. M. Stus', and V. B. Khalfin Full Text: PDF (296 kB) Influence of plasma treatment of the surface of silicon carbide on the characteristics of buried-gate junction field-effect transistors P. A. Ivanov, O. I. Kon'kov, V. N. Panteleev, and T. P. Samsonova Full Text: PDF (64 kB) en
dc.format Monograph. en_US
dc.format.extent 2181092 bytes
dc.format.extent 5865 bytes
dc.format.medium Electronic Resource. en_US
dc.format.mimetype application/pdf
dc.format.mimetype text/html
dc.language.iso en_US en
dc.publisher MAIK ���Nauka/Interperiodica��. en
dc.publisher Stony Brook University. en_US
dc.relation.ispartofseries V. 31 en
dc.relation.ispartofseries I. 11 en
dc.rights All Rights Reserved. Stony Brook University. en_US
dc.rights All Rights Reserved. Stony Brook University. en_US
dc.subject Semiconductors en
dc.subject.lcsh LC Subject Here. en_US
dc.subject.lcsh Physics en
dc.subject.other Keywords here. en_US
dc.title Semiconductors V. 31, I. 11 en
dc.type Other. en_US
dc.description.contributor The content contained herein is maintained and curated by the Preservation Department. en_US
dc.description.contributor This record is revised and maintained by the content administrators from the Cataloging & Metadata Department. en_US
dc.publisher.location Stony Brook, NY. en_US


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