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Semiconductors V. 33, I. 08

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dc.contributor.editor dc.contributor.editor[en_US] en_US
dc.contributor.other dc.contributor.other[en_US] en_US
dc.contributor.other dc.contributor.other[en_US] en_US
dc.date.accessioned 2007-06-11T19:30:31Z
dc.date.accessioned 2015-04-24T14:42:14Z
dc.date.available 2007-06-11T19:30:31Z
dc.date.available 2015-04-24T14:42:14Z
dc.date.issued 1999-08 en_US
dc.identifier.uri http://hdl.handle.net/1951/41404
dc.identifier.uri http://hdl.handle.net/11401/70143
dc.description dc.description[en_US] en_US
dc.description Semiconductors -- August 1999 Volume 33, Issue 8, pp. 821-932 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Distinctive features of the creation of radiation-induced defects in p-Si by photon-assisted low-dose ion implantation M. Yu. Barabanenkov, A. V. Leonov, V. N. Mordkovich, and N. M. Omelyanovskaya Full Text: PDF (36 kB) Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy M. D. Vilisova, I. V. Ivonin, L. G. Lavrentieva, S. V. Subach, M. P. Yakubenya, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, Yu. G. Musikhin, and V. V. Chaldyshev Full Text: PDF (540 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Band-edge photoluminescence of heavily doped InxGa1 ��� xAs1 ��� yPy (lambda = 1.2 ��m) M. V. Karachevtseva, V. A. Strakhov, and N. G. Yaremenko Full Text: PDF (83 kB) Determining the position of antimony impurity atoms in PbS by 119Sb(119mSn) emission M�_ssbauer spectroscopy V. F. Masterov, F. S. Nasredinov, P. P. Seregin, N. P. Seregin, A. V. Ermolaev, and S. I. Bondarevskii Full Text: PDF (35 kB) Intrinsic photoconductivity of copper-doped gallium phosphide N. N. Pribylov, V. A. Buslov, S. I. Rembeza, A. I. Spirin, and S. A. Sushkov Full Text: PDF (68 kB) Determining the energy levels of elementary primary defects in silicon V. V. Luk'yanitsa Full Text: PDF (47 kB) The influence of an external electric field and irradiation energy on the efficiency of Frenkel pair formation in silicon crystals Z. V. Basheleishvili and T. A. Pagava Full Text: PDF (32 kB) Electrical properties of InSb irradiated with fast neutrons from a nuclear reactor N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev Full Text: PDF (47 kB) Avalanche light-emitting diodes operating at room temperature based on single-crystal Si : Ho : O N. A. Sobolev, A. M. Emel'yanov, and Yu. A. Nikolaev Full Text: PDF (32 kB) SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES Conductivity of the insulating (oxide) layer on the surface of a semiconductor caused by electron-ion interaction at the insulator-semiconductor boundary E. I. Goldman, A. G. Zhdan, and G. V. Chucheva Full Text: PDF (86 kB) Determination of the valence-band offset and its temperature dependence in isotypic heterojunctions p-AlxGa1 ��� xAs/p-AlyGa1 ��� yAs from C ��� V measurements V. I. Zubkov, M. A. Mel'nik, A. V. Solomonov, A. N. Pikhtin, and F. Bugge Full Text: PDF (73 kB) Langevin-recombination-controlled explosive kinetics of electroluminescence in organic semiconductors V. I. Arkhipov and V. R. Nikitenko Full Text: PDF (43 kB) Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide E. F. Venger, V. V. Milenin, I. B. Ermolovich, R. V. Konakova, V. N. Ivanov, and D. I. Voitsikhovskii Full Text: PDF (373 kB) Photosensitivity of structures produced by heat treatment of CuInSe2 in different media V. Yu. Rud' and Yu. V. Rud' Full Text: PDF (74 kB) Investigation of the effect of surface treatment of a semiconductor on the characteristics of 6H-SiC Schottky diodes A. A. Lebedev, D. V. Davydov, V. V. Zelenin, and M. L. Korogodskii Full Text: PDF (34 kB) Free ion transport in the insulator layer and electron���ion exchange at an insulator���semiconductor phase boundary produced as a result of thermally stimulated ionic depolarization of silicon MOS structures E. I. Gol'dman, A. G. Zhdan, and G. V. Chucheva Full Text: PDF (79 kB) LOW-DIMENSIONAL SYSTEMS Transformation of a metal���oxide���silicon structure into a resonance-tunneling structure with quasi-zero-dimensional quantum states G. G. Kareva Full Text: PDF (37 kB) Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface A. F. Tsatsul'nikov, D. A. Bedarev, B. V. Volovik, S. V. Ivanov, M. V. Maksimov, Yu. G. Musikhin, N. N. Ledentsov, B. Ya. Mel'tser, V. A. Solov'ev, P. S. Kop'ev, A. Yu. Chernyshov, and M. V. Belousov Full Text: PDF (198 kB) Submillimeter photoconductivity of two-dimensional electron structures in Corbino geometry S. D. Suchalkin, Yu. B. Vasil'ev, S. V. Ivanov, and P. S. Kop'ev Full Text: PDF (42 kB) Interaction of surface acoustic waves with a two-dimensional electron gas in the presence of spin splitting of the Landau bands I. L. Drichko, A. M. D'yakonov, I. Yu. Smirnov, V. V. Preobrazhenskii, and A. I. Toropov Full Text: PDF (99 kB) New approach to the analysis of negative magnetostriction in two-dimensional structures G. M. Min'kov, S. A. Negashev, O. �. Rut, A. V. Germanenko, O. I. Khrykin, V. I. Shashkin, and V. M. Danil'tsev Full Text: PDF (53 kB) Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands B. V. Volovik, A. F. Tsatsul'nikov, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. N. Ledentsov, M. V. Maksimov, N. A. Maleev, Yu. G. Musikhin, A. A. Suvorova, V. M. Ustinov, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg, and P. Werner Full Text: PDF (254 kB) AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS Pulsed breakdown of chalcogenide glass semiconductor films in a magnetic field �. N. Voronkov Full Text: PDF (471 kB) Multiple bonds in hydrogen-free amorphous silicon A. I. Mashin and A. F. Khokhlov Full Text: PDF (179 kB) Current-voltage characteristics of Si:As blocked impurity band photodetectors with hopping conductivity (BIB-II) D. G. Esaev, S. P. Sinitsa, and E. V. Chernyavskii Full Text: PDF (70 kB) PHYSICS OF SEMICONDUCTOR DEVICES Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval lambda = 3 ��� 5 ��m N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin Full Text: PDF (62 kB) Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions A. P. Danilova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (77 kB) Lasing at a wavelength close to 1.3 ��m in InAs quantum-dot structures A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul'nikov, M. V. Maksimov, B. V. Volovik, D. A. Bedarev, Yu. M. Shernyakov, E. Yu. Kondrat'eva, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg Full Text: PDF (67 kB) en
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dc.format.extent 3163622 bytes
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dc.language.iso en_US en
dc.publisher MAIK ���Nauka/Interperiodica��. en
dc.publisher dc.publisher[en_US] en_US
dc.relation.ispartofseries V. 33 en
dc.relation.ispartofseries I. 08 en
dc.rights All Rights Reserved. Stony Brook University. en_US
dc.rights dc.rights[en_US] en_US
dc.subject Semiconductors en
dc.subject.lcsh dc.subject.lcsh[en_US] en_US
dc.subject.lcsh Physics en
dc.subject.other dc.subject.other[en_US] en_US
dc.title Semiconductors V. 33, I. 08 en
dc.type dc.type[en_US] en_US
dc.description.contributor dc.description.contributor[en_US] en_US
dc.description.contributor dc.description.contributor[en_US] en_US
dc.publisher.location dc.publisher.location[en_US] en_US


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