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Semiconductors V. 39, I. 01

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dc.contributor.editor dc.contributor.editor[en_US] en_US
dc.contributor.other dc.contributor.other[en_US] en_US
dc.contributor.other dc.contributor.other[en_US] en_US
dc.date.accessioned 2007-06-12T19:52:40Z
dc.date.accessioned 2015-04-24T14:42:39Z
dc.date.available 2007-06-12T19:52:40Z
dc.date.available 2015-04-24T14:42:39Z
dc.date.issued 2005-01 en_US
dc.identifier.uri http://hdl.handle.net/1951/41471
dc.identifier.uri http://hdl.handle.net/11401/70261
dc.description dc.description[en_US] en_US
dc.description Semiconductors -- January 2005 Volume 39, Issue 1, pp. 1-159 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Effect of the Parameters of Sapphire Substrates on the Crystalline Quality of GaN Layers Yu. N. Drozdov, N. V. Vostokov, D. M. Gaponova, V. M. Danil'tsev, M. N. Drozdov, O. I. Khrykin, A. S. Filimonov, and V. I. Shashkin pp. 1-3 Full Text: PDF (108 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Properties of the GaSb:Mn Layers Deposited from Laser Plasma Yu. A. Danilov, E. S. Demidov, Yu. N. Drozdov, V. P. Lesnikov, and V. V. Podol'skii pp. 4-7 Full Text: PDF (59 kB) Effect of the Conditions of Metal���Organic Chemical-Vapor Epitaxy on the Properties of GaInAsN Epitaxial Films V. M. Danil'tsev, D. M. Gaponova, M. N. Drozdov, Yu. N. Drozdov, A. V. Murel', D. A. Pryakhin, O. I. Khrykin, and V. I. Shashkin pp. 8-10 Full Text: PDF (50 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Growth of BGaAs Layers on GaAs Substrates by Metal���Organic Vapor-Phase Epitaxy D. A. Pryakhin, V. M. Danil'tsev, Yu. N. Drozdov, M. N. Drozdov, D. M. Gaponova, A. V. Murel', V. I. Shashkin, and S. Rushworth pp. 11-13 Full Text: PDF (53 kB) Features of GaN Growth Attained by Metal���Organic Vapor-Phase Epitaxy in a Low-Pressure Reactor O. I. Khrykin, A. V. Butin, D. M. Gaponova, V. M. Danil'tsev, M. N. Drozdov, Yu. N. Drozdov, A. V. Murel, and V. I. Shashkin pp. 14-16 Full Text: PDF (53 kB) LOW-DIMENSIONAL SYSTEMS Effect of an Interfacial Oxide Layer on the Electroluminescence Efficiency of Metal���Quantum-Confined Semiconductor Heterostructures N. V. Baidus', P. B. Demina, M. V. Dorokhin, B. N. Zvonkov, E. I. Malysheva, and E. A. Uskova pp. 17-21 Full Text: PDF (125 kB) Spectra of Persistent Photoconductivity in InAs/AlSb Quantum-Well Heterostructures V. Ya. Aleshkin, V. I. Gavrilenko, D. M. Gaponova, A. V. Ikonnikov, K. V. Marem'yanin, S. V. Morozov, Yu. G. Sadofyev, S. R. Johnson, and Y.-H. Zhang pp. 22-26 Full Text: PDF (76 kB) Long-Time Photoluminescence Kinetics of InAs/AlAs Quantum Dots in a Magnetic Field T. S. Shamirzaev, A. M. Gilinskii, A. K. Bakarov, A. I. Toropov, S. A. Figurenko, and K. S. Zhuravlev pp. 27-29 Full Text: PDF (44 kB) Electroluminescent Properties of Heterostructures with GaInNAs Quantum Wells A. V. Murel', V. M. Danil'tsev, Yu. N. Drozdov, D. M. Gaponova, V. I. Shashkin, V. B. Shmagin, and O. I. Khrykin pp. 30-32 Full Text: PDF (49 kB) A Study of Recombination Centers Related to As���Sb Nanoclusters in Low-Temperature Grown Gallium Arsenide P. N. Brunkov, A. A. Gutkin, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin pp. 33-36 Full Text: PDF (71 kB) Effect of the Electrochemical Modification of a Thin Ga(In)As Cap Layer on the Energy Spectrum of InAs/GaAs Quantum Dots I. A. Karpovich, A. V. Zdoroveishchev, S. V. Tikhov, P. B. Demina, and O. E. Khapugin pp. 37-40 Full Text: PDF (57 kB) Intersubband Absorption of Light in Heterostructures with Double Tunnel-Coupled GaAs/AlGaAs Quantum Wells L. E. Vorob'ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov, V. A. Shalygin, V. V. Kapaev, S. Hanna, S. Schmidt, E. A. Zibik, and A. Seilmeier pp. 41-43 Full Text: PDF (52 kB) Current Oscillations under Lateral Transport in GaAs/InGaAs Quantum Well Heterostructures A. V. Antonov, V. I. Gavrilenko, E. V. Demidov, B. N. Zvonkov, and E. A. Uskova pp. 44-49 Full Text: PDF (90 kB) Optical Phenomena in InAs/GaAs Heterostructures with Doped Quantum Dots and Artificial Molecules L. E. Vorob'ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov, V. A. Shalygin, A. A. Andreev, Yu. B. Samsonenko, A. A. Tonkikh, G. E. Cirlin, N. V. Kryzhanovskaya, V. M. Ustinov, S. Hanna, A. Seilmeier, N. D. Zakharov, and P. Werner pp. 50-53 Full Text: PDF (76 kB) Calculation of the States of Shallow Donors in Quantum Wells in a Magnetic Field Using Plane Wave Expansion V. Ya. Aleshkin and L. V. Gavrilenko pp. 54-57 Full Text: PDF (49 kB) The Effect of the Localization in a Quantum Well on the Lifetime of the States of Shallow Impurity Centers E. E. Orlova, P. Harrison, W.-M. Zhang, and M. P. Halsall pp. 58-61 Full Text: PDF (65 kB) Cyclotron Resonance in Doped and Undoped InAs/AlSb Heterostructures with Quantum Wells V. Ya. Aleshkin, V. I. Gavrilenko, A. V. Ikonnikov, Yu. G. Sadofyev, J. P. Bird, S. R. Johnson, and Y.-H. Zhang pp. 62-66 Full Text: PDF (65 kB) Terahertz Luminescence of GaAs-Based Heterostructures with Quantum Wells under the Optical Excitation of Donors N. A. Bekin, R. Kh. Zhukavin, K. A. Kovalevskii, S. G. Pavlov, B. N. Zvonkov, E. A. Uskova, and V. N. Shastin pp. 67-72 Full Text: PDF (77 kB) Efficient Near IR Photoluminescence from Gallium Nitride Layers Doped with Arsenic A. V. Andrianov, S. V. Novikov, I. S. Zhuravlev, T. Li, R. Xia, S. Bull, I. Harrison, E. C. Larkins, and C. T. Foxon pp. 73-76 Full Text: PDF (64 kB) Properties of Structures Based on Laser-Plasma Mn-Doped GaAs and Grown by MOC-Hydride Epitaxy Yu. V. Vasil'eva, Yu. A. Danilov, Ant. A. Ershov, B. N. Zvonkov, E. A. Uskova, A. B. Davydov, B. A. Aronzon, S. V. Gudenko, V. V. Ryl'kov, A. B. Granovsky, E. A. Gan'shina, N. S. Perov, and A. N. Vinogradov pp. 77-81 Full Text: PDF (71 kB) A Study of the Properties of the Structures with Al Nanoclusters Incorporated into the GaAs Matrix N. V. Vostokov, S. A. Gusev, V. M. Danil'tsev, M. N. Drozdov, Yu. N. Drozdov, A. I. Korytin, A. V. Murel, and V. I. Shashkin pp. 82-85 Full Text: PDF (161 kB) InGaAs/GaAs Quantum Dot Heterostructures for 3���5 ��m IR Detectors A. V. Antonov, D. M. Gaponova, V. M. Danil'tsev, M. N. Drozdov, L. D. Moldavskaya, A. V. Murel', V. S. Tulovchikov, and V. I. Shashkin pp. 86-88 Full Text: PDF (48 kB) Study of the Photoelectric Properties of Ge Quantum Dots in a ZnSe Matrix on GaAs I. G. Neizvestny, S. P. Suprun, and V. N. Shumsky pp. 89-94 Full Text: PDF (80 kB) Unusual Persistent Photoconductivity in the InAs/AlSb Quantum Well Yu. G. Sadofyev, A. Ramamoorthy, J. P. Bird, S. R. Johnson, and Y.-H. Zhang pp. 95-99 Full Text: PDF (66 kB) Special Features of Structural Interaction in (AlGaIn)N/GaN Heterostructures Used as Dislocation Filters I. P. Soshnikov, N. N. Ledentsov, A. F. Tsatsul'nikov, A. V. Sakharov, W. V. Lundin, E. A. Zavarin, A. V. Fomin, D. Litvinov, E. Hahn, and D. Gerthsen pp. 100-102 Full Text: PDF (160 kB) Lateral Photoconductivity of AlGaAs/InGaAs Structures with Quantum Wells and Self-Organized Quantum Dots Under Interband Illumination O. A. Shegai, A. K. Bakarov, A. K. Kalagin, and A. I. Toropov pp. 103-106 Full Text: PDF (56 kB) Spin Effects in Magnetoresistance Induced in an n-InxGa1 ��� xAs/GaAs Double Quantum Well by a Parallel Magnetic Field M. V. Yakunin, G. A. Al'shanskii, Yu. G. Arapov, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, B. N. Zvonkov, E. A. Uskova, A. de Visser, and L. Ponomarenko pp. 107-112 Full Text: PDF (80 kB) Terahertz Oscillator Based on Nonlinear Frequency Conversion in a Double Vertical Cavity Yu. A. Morozov, I. S. Nefedov, V. Ya. Aleshkin, and I. V. Krasnikova pp. 113-118 Full Text: PDF (83 kB) Localization of Holes in an InAs/GaAs Quantum-Dot Molecule M. M. Sobolev, G. E. Cirlin, Yu. B. Samsonenko, N. K. Polyakov, A. A. Tonkikh, and Yu. G. Musikhin pp. 119-123 Full Text: PDF (89 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS The Engineering and Properties of InAs Quantum Dot Molecules in a GaAs Matrix Yu. B. Samsonenko, G. E. Cirlin, A. A. Tonkikh, N. K. Polyakov, N. V. Kryzhanovskaya, V. M. Ustinov, L. E. Vorob'ev, D. A. Firsov, V. A. Shalygin, N. D. Zakharov, P. Werner, and A. Andreev pp. 124-126 Full Text: PDF (108 kB) Resonant Raman Scattering and Atomic Force Microscopy of InGaAs/GaAs Multilayer Nanostructures with Quantum Dots M. Ya. Valakh, V. V. Strelchuk, A. F. Kolomys, Yu. I. Mazur, Z. M. Wang, M. Xiao, and G. J. Salamo pp. 127-131 Full Text: PDF (176 kB) Photoluminescence and the Raman Scattering in Porous GaSb Produced by Ion Implantation Yu. A. Danilov, A. A. Biryukov, J. L. Gon�_alves, J. W. Swart, F. Iikawa, and O. Teschke pp. 132-135 Full Text: PDF (109 kB) Efficiency of Avalanche Light-Emitting Diodes Based on Porous Silicon S. K. Lazarouk, A. A. Leshok, V. A. Labunov, and V. E. Borisenko pp. 136-138 Full Text: PDF (52 kB) PHYSICS OF SEMICONDUCTOR DEVICES Observation of the Middle-Infrared Emission from Semiconductor Lasers Generating Two Frequency Lines in the Near-Infrared Region of the Spectrum V. Ya. Aleshkin, V. I. Gavrilenko, S. V. Morozov, K. V. Marem'yanin, B. N. Zvonkov, and S. M. Nekorkin pp. 139-141 Full Text: PDF (53 kB) The Resonant Terahertz Response of a Slot Diode with a Two-Dimensional Electron Channel V. V. Popov, G. M. Tsymbalov, M. S. Shur, and W. Knap pp. 142-146 Full Text: PDF (61 kB) Bloch Oscillations in Superlattices: The Problem of a Terahertz Oscillator Yu. A. Romanov and Yu. Yu. Romanova pp. 147-155 Full Text: PDF (111 kB) The Mode Competition, Instability, and Second Harmonic Generation in Dual-Frequency InGaAs/GaAs/InGaP Lasers V. Ya. Aleshkin, B. N. Zvonkov, S. M. Nekorkin, and Vl. V. Kocharovsky pp. 156-159 Full Text: PDF (59 kB) en
dc.format dc.format[en_US] en_US
dc.format.extent 2537275 bytes
dc.format.extent 14613 bytes
dc.format.medium dc.format.medium[en_US] en_US
dc.format.mimetype application/pdf
dc.format.mimetype text/html
dc.language.iso en_US en
dc.publisher MAIK ���Nauka/Interperiodica��. en
dc.publisher dc.publisher[en_US] en_US
dc.relation.ispartofseries V. 39 en
dc.relation.ispartofseries I. 01 en
dc.rights All Rights Reserved. Stony Brook University. en_US
dc.rights dc.rights[en_US] en_US
dc.subject Semiconductors en
dc.subject.lcsh dc.subject.lcsh[en_US] en_US
dc.subject.lcsh Physics en
dc.subject.other dc.subject.other[en_US] en_US
dc.title Semiconductors V. 39, I. 01 en
dc.type dc.type[en_US] en_US
dc.description.contributor dc.description.contributor[en_US] en_US
dc.description.contributor dc.description.contributor[en_US] en_US
dc.publisher.location dc.publisher.location[en_US] en_US


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