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Semiconductors V. 39, I. 08

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dc.contributor.editor Editor of work here. en_US
dc.contributor.other Preservation Department, Stony Brook University Libraries. en_US
dc.contributor.other Cataloging & Metadata Department, Stony Brook University Libraries. en_US
dc.date.accessioned 2007-06-12T20:01:55Z
dc.date.accessioned 2015-04-24T14:42:49Z
dc.date.available 2007-06-12T20:01:55Z
dc.date.available 2015-04-24T14:42:49Z
dc.date.issued 2005-08 en_US
dc.identifier.uri http://hdl.handle.net/1951/41478
dc.identifier.uri http://hdl.handle.net/11401/70306
dc.description leave(s) : ill; 28 cm. en_US
dc.description Semiconductors -- August 2005 Volume 39, Issue 8, pp. 861-988 REVIEW Power Bipolar Devices Based on Silicon Carbide P. A. Ivanov, M. E. Levinshtein, T. T. Mnatsakanov, J. W. Palmour, and A. K. Agarwal pp. 861-877 Full Text: PDF (199 kB) CONFERENCE. A REVIEW IV International Conference on Amorphous and Microcrystalline Semiconductors (July 5���7, 2004) E. I. Terukov pp. 878-880 Full Text: PDF (31 kB) CONFERENCE. ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Fast Exothermic Processes in Porous Silicon S. K. Lazarouk, A. V. Dolbik, P. V. Jaguiro, V. A. Labunov, and V. E. Borisenko pp. 881-883 Full Text: PDF (50 kB) CONFERENCE. ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Interpretation of the Visible Photoluminescence of Inequisized Silicon Nanoparticles Suspended in Ethanol V. E. Ogluzdin pp. 884-890 Full Text: PDF (66 kB) Photoluminescence of Erbium-Doped Aluminum Oxide Films with Embedded Silicon Nanoparticles S. K. Lazarouk, A. V. Mudryi, A. V. Ivanyukovich, A. A. Leshok, D. N. Unuchek, and V. A. Labunov pp. 891-893 Full Text: PDF (56 kB) Nanostructuring of Crystalline Grains of Natural Diamond Using Ionizing Radiation N. A. Poklonski, T. M. Lapchuk, N. I. Gorbachuk, V. A. Nikolaenko, and I. V. Bachuchin pp. 894-897 Full Text: PDF (111 kB) Permittivity Spectra and Characteristic Energy Losses of Electrons in ZnO at 100 K V. Val. Sobolev, V. V. Sobolev, and E. I. Terukov pp. 898-903 Full Text: PDF (70 kB) CONFERENCE. SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Characterization of an a-Si:H/c-Si Interface by Admittance Spectroscopy A. S. Gudovskikh, J.-P. Kleider, and E. I. Terukov pp. 904-909 Full Text: PDF (92 kB) CONFERENCE. LOW-DIMENSIONAL SYSTEMS Coulomb Blockade of the Conductivity of SiOx Films Due to One-Electron Charging of a Silicon Quantum Dot in a Chain of Electronic States M. D. Efremov, G. N. Kamaev, V. A. Volodin, S. A. Arzhannikova, G. A. Kachurin, S. G. Cherkova, A. V. Kretinin, V. V. Malyutina-Bronskaya, and D. V. Marin pp. 910-916 Full Text: PDF (93 kB) CONFERENCE. AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Processes of Growth of Disordered Semiconductors in the Context of Self-Organiziation Theory S. P. Vikhrov, N. V. Bodyagin, T. G. Larina, and S. M. Mursalov pp. 917-923 Full Text: PDF (224 kB) Photoinduced Relaxation of Metastable States in (a-Si:H):B N. N. Ormont, I. A. Kurova, and G. V. Prokof'ev pp. 924-927 Full Text: PDF (55 kB) The Mechanisms of Current Transport and Properties of a-SiC:H/c-Si Heterostructures A. A. Sherchenkov, B. G. Budagyan, and A. V. Mazurov pp. 928-933 Full Text: PDF (98 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Raman Spectroscopy Study of the Carbon Structure of a-C:(H, Cu) and a-C:(H, Co) Composite Films �. A. Smorgonskaya and V. I. Ivanov-Omskii pp. 934-940 Full Text: PDF (103 kB) CONFERENCE. AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Transport of Protons in Amorphous Hydrogenated Carbon V. I. Ivanov-Omskii and S. G. Yastrebov pp. 941-943 Full Text: PDF (39 kB) The Effect of Erbium and Oxygen on the Photoluminescence Intensity of Erbium and the Composition of a-SiOx:(H, Er, O) Films Deposited by DC Magnetron Sputtering Yu. K. Undalov, E. I. Terukov, O. B. Gusev, and V. Kh. Kudoyarova pp. 944-950 Full Text: PDF (112 kB) Structural Transformations and Optical Properties of As2S3 Chalcogenide Glasses I. V. Fekeshgazi, K. V. Mai, N. I. Matelesko, V. M. Mitsa, and E. I. Borkach pp. 951-954 Full Text: PDF (49 kB) Electron Microscopy Study of a Chalcogenide-Based Polycrystalline Condensate Microstructure: The Effect of Composition and Thickness on Internal Lattice Bending V. Yu. Kolosov, L. M. Veretennikov, Yu. B. Startseva, and C. L. Schvamm pp. 955-959 Full Text: PDF (548 kB) The Boson Peak in Raman Spectra of AsxS1 ��� x Glasses D. Arsova, Y. C. Boulmetis, C. Raptis, V. Pamukchieva, and E. Skordeva pp. 960-962 Full Text: PDF (44 kB) Reversible Photoinduced Changes in the Spectrum of Localized States in AsSe Films L. P. Kazakova, K. D. Tsendin, M. A. Tagirdzhanov, and N. S. Averkiev pp. 963-966 Full Text: PDF (50 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Causes of the Stability of Three-Bilayer Islands and Steps on a Si (111) Surface A. V. Zverev, I. G. Neizvestny, I. A. Reizvikh, K. N. Romanyuk, S. A. Teys, N. L. Shwartz, and Z. Sh. Yanovitskaya pp. 967-977 Full Text: PDF (378 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS The Properties of Amorphous Arsenic Chalcogenide Films Modified by Rare-Earth Complexes S. A. Kozyukhin, A. R. Fairushin, and �. N. Voronkov pp. 978-982 Full Text: PDF (72 kB) Interaction of Fullerene with Single-Crystal Silicon O. M. Sreseli, I. B. Zakharova, S. P. Vul', T. L. Makarova, L. V. Sharonova, L. V. Belyakov, and D. N. Goryachev pp. 983-986 Full Text: PDF (51 kB) PERSONALIA In Memory of Anatolii Robertovich Regel' (1915���1989) pp. 987-988 Full Text: PDF (59 kB) en
dc.format Monograph. en_US
dc.format.extent 2455432 bytes
dc.format.extent 8053 bytes
dc.format.medium Electronic Resource. en_US
dc.format.mimetype application/pdf
dc.format.mimetype text/html
dc.language.iso en_US en
dc.publisher MAIK ���Nauka/Interperiodica��. en
dc.publisher Stony Brook University. en_US
dc.relation.ispartofseries V. 39 en
dc.relation.ispartofseries I. 08 en
dc.rights All Rights Reserved. Stony Brook University. en_US
dc.rights All Rights Reserved. Stony Brook University. en_US
dc.subject Semiconductors en
dc.subject.lcsh LC Subject Here. en_US
dc.subject.lcsh Physics en
dc.subject.other Keywords here. en_US
dc.title Semiconductors V. 39, I. 08 en
dc.type Other. en_US
dc.description.contributor The content contained herein is maintained and curated by the Preservation Department. en_US
dc.description.contributor This record is revised and maintained by the content administrators from the Cataloging & Metadata Department. en_US
dc.publisher.location Stony Brook, NY. en_US


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