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Through-Silicon Via (TSV) Related Noise Coupling in Three-Dimensional (3-D) Integrated Circuits (ICs)

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dc.contributor.advisor Salman, Emre en_US
dc.contributor.author Asgari, Mohammad Hosein en_US
dc.contributor.other Department of Electrical Engineering en_US
dc.date.accessioned 2013-05-22T17:34:06Z
dc.date.accessioned 2015-04-24T14:46:09Z
dc.date.available 2013-05-22T17:34:06Z
dc.date.available 2015-04-24T14:46:09Z
dc.date.issued 2011-12-01
dc.identifier Asgari_grad.sunysb_0771M_10782 en_US
dc.identifier.uri http://hdl.handle.net/1951/59570 en_US
dc.identifier.uri http://hdl.handle.net/11401/71144 en_US
dc.description 42 pgs en_US
dc.description.abstract As conventional integrated circuits are approaching the physical limits due to technology scaling, alternative and complementary technologies have become a major focus. Among various emerging technologies, three-dimensional (3-D) integration technology offers several advantages to increase performance and functionality while reducing cost. In 3-D technologies, multiple dies are stacked in a monolithic fashion where the communication among the dies is achieved by vertical through-silicon vias (TSVs). Despite important advantages, 3-D integration has certain challenges that need to be addressed. In this thesis, noise coupling due to TSVs, an important issue that degrades signal integrity, is investigated. Compact models are proposed to analyze TSV related noise coupling for different TSV types such as via-first and via-last, and different substrate grounding topologies. Figures-of-merit and design guidelines are also developed to ensure reliable 3-D circuits in the presence of TSV related noise coupling. en_US
dc.description.sponsorship This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree. en_US
dc.format Monograph en_US
dc.format.medium Electronic Resource en_US
dc.language.iso en_US en_US
dc.publisher The Graduate School, Stony Brook University: Stony Brook, NY. en_US
dc.subject.lcsh Electrical engineering en_US
dc.subject.other Substrate Noise, Three Dimensional Circuits, TSV coupling en_US
dc.title Through-Silicon Via (TSV) Related Noise Coupling in Three-Dimensional (3-D) Integrated Circuits (ICs) en_US
dc.type Thesis en_US
dc.mimetype Application/PDF en_US
dc.contributor.committeemember Stanacevic, Miluti en_US

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