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Experimental Study of Electron Transport through Nanometer-Scale Metal-Oxide Junctions

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dc.contributor.advisor Likharev, Konstantin K. en_US
dc.contributor.author Tan, Zhongkui en_US
dc.contributor.other Department of Physics en_US
dc.date.accessioned 2012-05-15T18:07:07Z
dc.date.accessioned 2015-04-24T14:53:15Z
dc.date.available 2012-05-15T18:07:07Z
dc.date.available 2015-04-24T14:53:15Z
dc.date.issued 2010-05-01
dc.identifier Tan_grad.sunysb_0771E_10020.pdf en_US
dc.identifier.uri http://hdl.handle.net/1951/55644 en_US
dc.identifier.uri http://hdl.handle.net/11401/72694 en_US
dc.description.abstract This work presents results of an experimental study of electron transport through few nanometer-scale metal oxide junctions of two types:First, we have measured transport properties of Nb/Al/Nb junctions fabricated using thermal oxidation or rf-plasma oxidation at various conditions, with rapid thermal post-annealing (RTA) to improve junction endurance in electric fields in excess of 10 MV/cm. The results indicate that such junctions may combine high field endurance (corresponding to at least 10^10 write/erase cycles in floating-gate memories) and high current density (corresponding to 30-ns-scale write/erase time) at high voltages, with very low conductance (corresponding to retention time scale ~0.1 s) at low voltages. We discuss the improvements necessary for the use of such junctions in advanced floating-gate memories.Second, we have studied resistive bistability (memory) effects in junctions based on several metal oxides, with a focus on sample-to-sample reproducibility which is necessary for the practical use of such junctions, in particular as crosspoint devices of hybrid CMOS/nanoelectronic circuits. Few-nm-thick layers of NbOx, CuOx and TiOx have been formed by thermal and plasma oxidation, at various deposition and oxidation conditions, both with or without rapid thermal post-annealing. The resistive bistability effect has been observed for all these materials, with particularly high switching endurance (over 1000 switching cycles) obtained for single-layer TiO2 junctions, and the best reproducibility reached for multi-layer junctions of the same material. Fabrication optimization has allowed us to improve the OFF/ON resistance ratio to about 1000, though the sample-to-sample reproducibility is so far still lower than that required for large scale integration. en_US
dc.description.sponsorship This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree. en_US
dc.format Monograph en_US
dc.format.medium Electronic Resource en_US
dc.language.iso en_US en_US
dc.publisher The Graduate School, Stony Brook University: Stony Brook, NY. en_US
dc.subject.lcsh Physics, Condensed Matter en_US
dc.subject.other crested barrier, electron transport, metal oxide, rapid thermal annealing, reproducibility, resistive bistability en_US
dc.title Experimental Study of Electron Transport through Nanometer-Scale Metal-Oxide Junctions en_US
dc.type Dissertation en_US
dc.mimetype Application/PDF en_US
dc.contributor.committeemember James E. Lukens en_US
dc.contributor.committeemember Ismail Zahed en_US
dc.contributor.committeemember Andreas Mayr. en_US

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