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Evaluation of 4H Silicon Carbide and Gallium Nitride Crystals for Power Electronics & Lighting Applications

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dc.contributor.advisor Dudley, Michael en_US
dc.contributor.author Yang, Xiaolin en_US
dc.contributor.other Department of Materials Science and Engineering en_US
dc.date.accessioned 2017-09-18T23:49:58Z
dc.date.available 2017-09-18T23:49:58Z
dc.date.issued 2016-12-01 en_US
dc.identifier.uri http://hdl.handle.net/11401/76070 en_US
dc.description 73 pg. en_US
dc.description.abstract Silicon carbide is a promising semiconductor material with more preferable properties than the traditional materials like silicon dioxide and gallium arsenide. With large band-gap, high breakdown voltage, high thermal conductivity and good resistance in radiation environment, SiC is widely used in electronic devices especially under high frequency, high voltage and high temperature. Despite of its good properties, the application of SiC is limited by the growth of high quality single crystal boule, namely, the defects inside the SiC crystals have deleterious effects on the performance of devices made of it. In this thesis, the combination of techniques including Synchrotron White Beam X-ray Topography, Monochromatic X-ray Topography and Nomarski Optical Microscopy is used, and the distribution of dislocations including Basal Plane Dislocations, Threading Edge Dislocations and Threading Screw Dislocations are measured and other defects like Stacking Fault, Low Angle Grain Boundary and V-shape are also characterized. Due to the wide band-gap and high efficiency of emitting light, gallium nitride is widely used in LED industry. Similar with silicon carbide, gallium nitride crystal also suffers from the defects inside the crystals. In this thesis, High Resolution of X-ray Diffraction is used to measure the rocking curve of the crystal, and software HXRD is used to simulated the rocking curve of perfect crystal. And the Full Width Half Maximum is calculated to evaluate the overall quality of the crystal. en_US
dc.description.sponsorship This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree. en_US
dc.format Monograph en_US
dc.format.medium Electronic Resource en_US
dc.language.iso en_US en_US
dc.publisher The Graduate School, Stony Brook University: Stony Brook, NY. en_US
dc.subject.lcsh Materials Science en_US
dc.subject.other HRXRD, semiconductor, x-ray topography en_US
dc.title Evaluation of 4H Silicon Carbide and Gallium Nitride Crystals for Power Electronics & Lighting Applications en_US
dc.type Thesis en_US
dc.mimetype Application/PDF en_US
dc.contributor.committeemember Raghothamachar, Balaji en_US
dc.contributor.committeemember Venkatesh, T.A.. en_US


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