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Characterization of Defects in Single Crystal Epitaxial Silicon for Solar cells

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dc.contributor.advisor Dudley, Micheal en_US
dc.contributor.author Wang, Hao en_US
dc.contributor.other Department of Materials Science and Engineering en_US
dc.date.accessioned 2017-09-20T16:50:05Z
dc.date.available 2017-09-20T16:50:05Z
dc.date.issued 2013-12-01 en_US
dc.identifier.uri http://hdl.handle.net/11401/76352 en_US
dc.description 47 pgs en_US
dc.description.abstract In semiconductor technology for solar applications, the demand for high level of structural perfection in single crystal silicon has increased. The defects in the crystals can affect the efficiency of solar cells, so the study of imperfections is important for providing feedback to develop high quality crystal. X-ray topography is a nondestructive method and a powerful tool to evaluate crystals for technological applications, growth and processing. In this study, defects in homoepitaxial silicon epilayers grown by chemical vapor deposition (CVD) for solar cell application with the dislocation density of 9.4×〖 10〗 ^3cm-2 have been mapped and characterized by synchrotron white beam X-ray topography (SWBXT), synchrotron monochromated beam X-ray topography, high resolution X-ray diffraction and optical microscopy. In free standing 200µm thick epitaxial single crystal silicon detached from the silicon substrate, a crisscross network of screw dislocations, misfit dislocations and multiple stacking fault configurations are revealed and quantitatively characterized. The silicon epitaxial layer (~60µm) attached to the silicon substrate is characterized by threading dislocations, misfit dislocations and a non-uniform distribution of bending stains from mismatch. These defects can impact the performance and yield of this CVD process for solar cell manufacturing. en_US
dc.description.sponsorship This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree. en_US
dc.format Monograph en_US
dc.format.medium Electronic Resource en_US
dc.language.iso en_US en_US
dc.publisher The Graduate School, Stony Brook University: Stony Brook, NY. en_US
dc.subject.lcsh Materials Science en_US
dc.title Characterization of Defects in Single Crystal Epitaxial Silicon for Solar cells en_US
dc.type Thesis en_US
dc.mimetype Application/PDF en_US
dc.contributor.committeemember Raghothamachar, Balaji en_US
dc.contributor.committeemember Venkatesh, T.A. en_US


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