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Characterizations of Defects in Bulk Sapphire

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dc.contributor.advisor Dudley, Michael en_US
dc.contributor.advisor Raghothamachar, Balaji en_US
dc.contributor.author Yang, Yu en_US
dc.contributor.other Department of Materials Science and Engineering. en_US
dc.date.accessioned 2017-09-20T16:50:07Z
dc.date.available 2017-09-20T16:50:07Z
dc.date.issued 2012-12-01 en_US
dc.identifier.uri http://hdl.handle.net/11401/76365 en_US
dc.description 62 pg. en_US
dc.description.abstract Defects would effect the optical properties and operation performances of sapphire single crystal material. Further understanding the defects structure and origins in sapphire plays a crucial role. This study is focusing on analyzing the structure of linear, 2D and 3D defects using the X-ray topography technique. Several other techniques such as etch pits method and X-ray reticulography are also employed to revealing the properties of dislocations and stress distribution around certain defect feature. en_US
dc.description.sponsorship This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree. en_US
dc.format Monograph en_US
dc.format.medium Electronic Resource en_US
dc.language.iso en_US en_US
dc.publisher The Graduate School, Stony Brook University: Stony Brook, NY. en_US
dc.subject.lcsh Materials Science en_US
dc.subject.other dislocations, sapphire, X-ray Topography en_US
dc.title Characterizations of Defects in Bulk Sapphire en_US
dc.type Thesis en_US
dc.mimetype Application/PDF en_US
dc.contributor.committeemember Venkatesh, T. A.. en_US


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