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Development of narrow gap semiconductor materials and devices for optoelectronic applications

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dc.contributor.advisor Belenky, Gregory en_US
dc.contributor.advisor Donetsky, Dmitry en_US
dc.contributor.author Wang, Ding en_US
dc.contributor.other Department of Electrical Engineering en_US
dc.date.accessioned 2017-09-20T16:52:48Z
dc.date.available 2017-09-20T16:52:48Z
dc.date.issued 2013-12-01 en_US
dc.identifier.uri http://hdl.handle.net/11401/77489 en_US
dc.description 73 pgs en_US
dc.description.abstract Mid-wave to long-wave infrared (3~12 μ m in wavelength) optoelectronic devices have broad applications in gas sensing, molecular spectroscopy, imaging, environmental, industrial monitoring, etc. This work aims to explore new III-V materials and heterostructures to develop light emitting devices and detectors for the infrared spectral region. Optical properties of dilute nitride GaSbN and InAsN materials were investigated. We observed strong bandgap reduction with increasing nitrogen incorporation. GaSbN with 1.4% of nitrogen showed 300 meV narrower bandgap than GaSb; for InAsN the bandgap energy was reduced by 150 meV with nitrogen incorporation up to 2.25%. The carrier lifetimes within the picoseconds - nanoseconds range were measured for GaSbN and InAsN. InAs1-xSbx alloys have the smallest bandgap energies within conventional III-V semiconductors. We demonstrated that growing compositionally graded buffers (Ga(Al)InSb on GaSb substrates) allows the fabrication of bulk unstrained and unrelaxed InAs1-xSbx layers with band gap energy as low as 120 meV. Photoluminescence spectra (5 -10 μ m) and minority carrier lifetimes (up to 250 ns) were measured. Light emitting diodes (LEDs) and photodetectors were fabricated using InAs1-xSbx alloys. LEDs with x = 0.2 and x = 0.4 demonstrated output powers of 90 μ W at 5 μ m and 8 μ W at 8 μ m respectively, at the temperature of 80 K. Barrier type photodetectors with InAs1-xSbx (x = 0.4) absorber layer and AlInSb barrier were fabricated. Front side illuminated detectors with 1 μ m thick absorber demonstrated an external quantum efficiency of 18 % at 8 μ m at 150 K. en_US
dc.description.sponsorship This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree. en_US
dc.format Monograph en_US
dc.format.medium Electronic Resource en_US
dc.language.iso en_US en_US
dc.publisher The Graduate School, Stony Brook University: Stony Brook, NY. en_US
dc.subject.lcsh Electrical engineering en_US
dc.subject.other Detector, Dilute nitride, InAsSb, Lifetime, Metamorphic en_US
dc.title Development of narrow gap semiconductor materials and devices for optoelectronic applications en_US
dc.type Dissertation en_US
dc.mimetype Application/PDF en_US
dc.contributor.committeemember Kamoua, Ridha en_US
dc.contributor.committeemember Shterengas, Leon en_US
dc.contributor.committeemember Hwang, David en_US

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